Bourns Electronic Solutions BD Hoja de datos

No.	parte #	Fabricante	Descripción
1	BDT61	Bourns Electronic Solutions	NPN Transistor 50°C free air temperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot Tj Tstg TA VCEO V CBO SYMBOL VALUE 60 80 100 120 60 80 100 120 5 4 0.1 50 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT DataSheet 4 U .com INFORMATI
2	BD243C	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTORS m from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL V CEO VCER SYMBOL VALUE 55 70 90 115 45 60 80 100 5 6 10 3 65 2 62.5 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3
3	BDW24	Bourns Electronic Solutions	PNP Transistor °C free air temperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot Tj Tstg TA VCEO V CBO SYMBOL VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -6 -0.2 50 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT DataSheet 4 U .com IN
4	BDX34	Bourns Electronic Solutions	PNP Transistor W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot TJ Tstg TA VCEO V CBO SYMBOL VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -10 -0.3 70 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C
5	BDX33	Bourns Electronic Solutions	NPN Transistor W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot TJ Tstg TA VCEO V CBO SYMBOL VALUE 45 60 80 100 120 45 60 80 100 120 5 10 0.3 70 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT
6	BDX53	Bourns Electronic Solutions	NPN SILICON POWER DARLINGTONS 50°C free air temperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot Tj Tstg TA VCEO V CBO SYMBOL VALUE 45 60 80 100 45 60 80 100 5 8 0.2 60 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT DataSheet 4 U .com INFORMATION
7	BD243	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTORS m from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL V CEO VCER SYMBOL VALUE 55 70 90 115 45 60 80 100 5 6 10 3 65 2 62.5 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3
8	BD545	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTORS uited. 2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. VEBO IC Ptot Ptot TA Tj Tstg TL VCEO V CBO SYMBOL VALUE 40 60 80 100 40 60 80 100 5 15 85 3.5 -65
9	BD745	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTOR ange Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot ½LIC2 TA Tj Tstg TL VCEO V CBO SYMBOL VALUE 50 70 90 110 45 60 80 100 5 20 25 7 115 3.5 90 -65 to +150 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C
10	BD243B	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTORS m from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL V CEO VCER SYMBOL VALUE 55 70 90 115 45 60 80 100 5 6 10 3 65 2 62.5 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3
11	BDW93C	Bourns Electronic Solutions	NPN SILICON POWER DARLINGTONS 50°C free air temperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot Tj Tstg TA VCEO V CBO SYMBOL VALUE 45 60 80 100 45 60 80 100 5 12 0.3 80 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT INFORMATION 1 SEPTEMBER 1993
12	BDW84B	Bourns Electronic Solutions	PNP SILICON POWER DARLINGTONS 2. 3. 4. VEBO IC IB Ptot Ptot ½LIC2 Tj Tstg TA VCEO V CBO SYMBOL VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -15 -0.5 150 3.5 100 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C V V UNIT These values apply when the base-emitter di
13	BD645	Bourns Electronic Solutions	NPN SILICON POWER DARLINGTONS EBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL VCEO V CBO SYMBOL VALUE 80 100 120 140 60 80 100 120 5 8 12 0.3 62.5 2 50 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to
14	BD649	Bourns Electronic Solutions	NPN SILICON POWER DARLINGTONS EBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL VCEO V CBO SYMBOL VALUE 80 100 120 140 60 80 100 120 5 8 12 0.3 62.5 2 50 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to
15	BD743	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTORS ge Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot ½LIC2 TA Tj Tstg TL VCEO V CBO SYMBOL VALUE 50 70 90 110 45 60 80 100 5 15 20 5 90 2 90 -65 to +150 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C °C
16	BD243A	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTORS m from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL V CEO VCER SYMBOL VALUE 55 70 90 115 45 60 80 100 5 6 10 3 65 2 62.5 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3
17	BDW84C	Bourns Electronic Solutions	PNP SILICON POWER DARLINGTONS 2. 3. 4. VEBO IC IB Ptot Ptot ½LIC2 Tj Tstg TA VCEO V CBO SYMBOL VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -15 -0.5 150 3.5 100 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C V V UNIT These values apply when the base-emitter di
18	BD546B	Bourns Electronic Solutions	PNP SILICON POWER TRANSISTORS
19	BD546A	Bourns Electronic Solutions	PNP SILICON POWER TRANSISTORS
20	BD647	Bourns Electronic Solutions	NPN SILICON POWER DARLINGTONS EBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL VCEO V CBO SYMBOL VALUE 80 100 120 140 60 80 100 120 5 8 12 0.3 62.5 2 50 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to