Bourns BDW Hoja de datos

No.	parte #	Fabricante	Descripción
1	BDW94C	Bourns	PNP SILICON POWER DARLINGTONS ase temperature at the rate of 0.64 W/°C. VCBO VCEO VEBO IC IB Ptot Ptot Tj Tstg TA 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -12 -0.3 80 2 -65 to +150 -65 to +150 -65 to +
2	BDW24B	Bourns	PNP Transistor y to 150°C free air temperature at the rate of 16 mW/°C. SYMBOL VCBO VCEO VEBO IC IB Ptot Ptot Tj Tstg TA VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -6 -0.2 50 2 -65 to +150 -65 to +150 -65 to +150 UNIT V V V A A W W °C °C °C PRODUCT INFORMATION
3	BDW24	Bourns Electronic Solutions	PNP Transistor °C free air temperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot Tj Tstg TA VCEO V CBO SYMBOL VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -6 -0.2 50 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT DataSheet 4 U .com IN
4	BDW83	Bourns	NPN SILICON POWER DARLINGTONS ) Operating junction temperature range Operating temperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. 5 15 0.5 150 3.5 100 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C These values apply when the base-emitter diod
5	BDW24C	Bourns	PNP Transistor y to 150°C free air temperature at the rate of 16 mW/°C. SYMBOL VCBO VCEO VEBO IC IB Ptot Ptot Tj Tstg TA VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -6 -0.2 50 2 -65 to +150 -65 to +150 -65 to +150 UNIT V V V A A W W °C °C °C PRODUCT INFORMATION
6	BDW24A	Bourns	PNP Transistor y to 150°C free air temperature at the rate of 16 mW/°C. SYMBOL VCBO VCEO VEBO IC IB Ptot Ptot Tj Tstg TA VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -6 -0.2 50 2 -65 to +150 -65 to +150 -65 to +150 UNIT V V V A A W W °C °C °C PRODUCT INFORMATION
7	BDW83A	Bourns	NPN SILICON POWER DARLINGTONS ) Operating junction temperature range Operating temperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. 5 15 0.5 150 3.5 100 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C These values apply when the base-emitter diod
8	BDW83B	Bourns	NPN SILICON POWER DARLINGTONS ) Operating junction temperature range Operating temperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. 5 15 0.5 150 3.5 100 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C These values apply when the base-emitter diod
9	BDW83C	Bourns	NPN SILICON POWER DARLINGTONS ) Operating junction temperature range Operating temperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. 5 15 0.5 150 3.5 100 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C These values apply when the base-emitter diod
10	BDW93C	Bourns Electronic Solutions	NPN SILICON POWER DARLINGTONS 50°C free air temperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot Tj Tstg TA VCEO V CBO SYMBOL VALUE 45 60 80 100 45 60 80 100 5 12 0.3 80 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT INFORMATION 1 SEPTEMBER 1993
11	BDW84B	Bourns Electronic Solutions	PNP SILICON POWER DARLINGTONS 2. 3. 4. VEBO IC IB Ptot Ptot ½LIC2 Tj Tstg TA VCEO V CBO SYMBOL VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -15 -0.5 150 3.5 100 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C V V UNIT These values apply when the base-emitter di
12	BDW84C	Bourns Electronic Solutions	PNP SILICON POWER DARLINGTONS 2. 3. 4. VEBO IC IB Ptot Ptot ½LIC2 Tj Tstg TA VCEO V CBO SYMBOL VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -15 -0.5 150 3.5 100 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C V V UNIT These values apply when the base-emitter di
13	BDW94A	Bourns	PNP SILICON POWER DARLINGTONS ase temperature at the rate of 0.64 W/°C. VCBO VCEO VEBO IC IB Ptot Ptot Tj Tstg TA 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -12 -0.3 80 2 -65 to +150 -65 to +150 -65 to +
14	BDW94	Bourns	PNP SILICON POWER DARLINGTONS ase temperature at the rate of 0.64 W/°C. VCBO VCEO VEBO IC IB Ptot Ptot Tj Tstg TA 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -12 -0.3 80 2 -65 to +150 -65 to +150 -65 to +
15	BDW93A	Bourns Electronic Solutions	NPN SILICON POWER DARLINGTONS 50°C free air temperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot Tj Tstg TA VCEO V CBO SYMBOL VALUE 45 60 80 100 45 60 80 100 5 12 0.3 80 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT INFORMATION 1 SEPTEMBER 1993
16	BDW93B	Bourns Electronic Solutions	NPN SILICON POWER DARLINGTONS 50°C free air temperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot Tj Tstg TA VCEO V CBO SYMBOL VALUE 45 60 80 100 45 60 80 100 5 12 0.3 80 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT INFORMATION 1 SEPTEMBER 1993
17	BDW93	Bourns Electronic Solutions	NPN SILICON POWER DARLINGTONS 50°C free air temperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot Tj Tstg TA VCEO V CBO SYMBOL VALUE 45 60 80 100 45 60 80 100 5 12 0.3 80 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT INFORMATION 1 SEPTEMBER 1993
18	BDW84A	Bourns Electronic Solutions	PNP SILICON POWER DARLINGTONS 2. 3. 4. VEBO IC IB Ptot Ptot ½LIC2 Tj Tstg TA VCEO V CBO SYMBOL VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -15 -0.5 150 3.5 100 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C V V UNIT These values apply when the base-emitter di
19	BDW84D	Bourns Electronic Solutions	PNP SILICON POWER DARLINGTONS 2. 3. 4. VEBO IC IB Ptot Ptot ½LIC2 Tj Tstg TA VCEO V CBO SYMBOL VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -15 -0.5 150 3.5 100 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C V V UNIT These values apply when the base-emitter di
20	BDW83D	Bourns	NPN SILICON POWER DARLINGTONS ) Operating junction temperature range Operating temperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. 5 15 0.5 150 3.5 100 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C These values apply when the base-emitter diod