Bourns BD8 Hoja de datos

No.	parte #	Fabricante	Descripción
1	BD895A	Bourns	NPN SILICON POWER DARLINGTONS of 0.56 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. VCBO VCEO VEBO IC IB Ptot Ptot TA Tj Tstg VALUE 45 60 80 45 60 80 5 8 0.3 70 2 -65 to +150 -65 to +150 -65 to +150 UNIT V V V A A W W °C °C °C PRODUCT INFORMA
2	BD898	Bourns Electronic Solutions	PNP Transistor emperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot TA Tj Tstg VCEO V CBO SYMBOL VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -8 -0.3 70 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT DataSheet 4 U .com INFORMATION 1
3	BD899A	Bourns	NPN SILICON POWER DARLINGTONS of 0.56 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. VCBO VCEO VEBO IC IB Ptot Ptot TA Tj Tstg VALUE 45 60 80 45 60 80 5 8 0.3 70 2 -65 to +150 -65 to +150 -65 to +150 UNIT V V V A A W W °C °C °C PRODUCT INFORMA
4	BD897A	Bourns	NPN SILICON POWER DARLINGTONS of 0.56 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. VCBO VCEO VEBO IC IB Ptot Ptot TA Tj Tstg VALUE 45 60 80 45 60 80 5 8 0.3 70 2 -65 to +150 -65 to +150 -65 to +150 UNIT V V V A A W W °C °C °C PRODUCT INFORMA
5	BD896	Bourns Electronic Solutions	PNP Transistor emperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot TA Tj Tstg VCEO V CBO SYMBOL VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -8 -0.3 70 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT DataSheet 4 U .com INFORMATION 1