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Bookly |
P-Channel P-MOSFET OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb T |
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Bookly |
P-Channel MOSFET S (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward |
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Bookly |
N-Channel MOSFET Pin Description • +30V / 4A , N-MOSFET RDS(ON)=30mΩ(typ.) @ VGS=10V RDS(ON)=50mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications D G S Top View of SOT-23 D • Power Manageme |
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BOOKLY |
Single-Supply Dual High Current Operational/Audio Amplifier Single Supply Operating Voltage High Output Current Slew Rate Package Outline Bipolar Technology (+3~+15V), (100mA) (1.0V/µs) SOP8 much improved from CM8608 on input voltage. PIN CONFIGURATION PIN FUNCTION 1 A OUTPUT 2 A-INPUT 3 A+INTPUT 4 GND 5 |
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Desde 2024. D4U Semiconductor.
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