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NPN Silicon Transistor 5V Transition Frequency at VCE=10V, IE=1mA Collector Output Capacitance at VCB=10V, f=1MHz Base Intrinsic Resistance at VCB=10V IC=1mA, f=30MHz Noise Figure at VCE=6V, IC=0.1Ma f=1KHz, RG=10KΩ NF 1 10 dB Rbb’ 50 Ω COB 2 3.5 pF fT 100 MHz IEBO 0.1 μA |
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NPN Silicon Transistor |
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NPN Silicon Transistor IC=0.1mA f=1KHz,Rg=10KΩ Collector Output Capacitance at VCB=10V, f=1MHz Symbol hFE hFE hFE hFE ICBO IEBO VCE(sat) fT NF COB Min. 70 120 200 350 - - - 80 - - Typ. - - - 0.10 1.0 2.0 Max. 140 240 400 700 0.1 0.1 0.25 10 3.5 Unit - μA μA V MHz dB |
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NPN Silicon Transistor |
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NPN Transistor z High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA z High voltage:VCEO=50V MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collecto |
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NPN Silicon Triple Diffused Planar Transistor dth Product at VCE=30V, IC=10mA Symbol hFE hFE ICBO IEBO VCE(sat) VBE(sat) fT Min. 60 100 - Typ. 70 Max. 120 200 0.1 0.1 0.6 1.0 - Unit μA μA V V MHz Page 2 of 2 7/15/2011 |
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NPN Silicon Epitaxial Planar Transistor V(BR)EBO at VCB=40V Emitter Cutoff Current ICBO at VEB=3V Collector Saturation Voltage IEBO at IC=100mA, IB=10mA Gain Bandwidth Product VCE(sat) at VCE=6V, IC=10mA Output Capacitance fT at VCB=6V, f=1MHz Noise Figure COB at VCE=6V, IE=0.5 |
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NPN Silicon Epitaxial Planar Transistor rent at VCB=60V Emitter Cutoff Current at VEB=5V Transition Frequency VCE(sat) ICBO IEBO - 0.1 0.25 V - 0.1 μA - 0.1 μA at VCE=10V, IC=1mA Collector Output Capacitance fT 80 - - MHz at VCB=10V, f=1MHz Noise Figure COB - 2 3.5 pF at VCE |
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TO-92 Plastic-Encapsulate Transistors z Complement to 2SA928A z High DC Current Gain MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Pow |
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NPN Silicon Transistor ransition Frequency at VCE = 10 V, IC = 1 mA fT Collector Output Capacitance at VCB = 10 V, f = 1 MHz Cob Noise Figure at VCE = 6 V, IC = 0.1 mA, f = 1 KHz, RG = 10 KΩ NF 70 120 200 350 - - - 80 - - - 140 - 240 - 400 - 700 - - 0.1 µA - 0.1 µA |
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NPN Silicon Epitaxial Planar Transistor ․High frequency current gain ․High speed switching ․Small output capacitance Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector |
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NPN Silicon Epitaxial Planar Transistor |
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NPN Silicon Epitaxial Planar Transistor ollector-Emitter Breakdown Voltage at IC=10mA Emitter-Base Breakdown Voltage at IE=1mA Collector Output Capacitance at VCB=10V, f=1.0MHz Collector to Emitter Saturation Voltage at IC=2A, IB=50mA Base-Emitter Voltage at VCE=1V, IC=2A Transition Freque |
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NPN Transistor - 0.1 µA Collector Emitter Breakdown Voltage at IC = 10 mA V(BR)CEO 30 - - V Collector Emitter Saturation Voltage at IC = 500 mA, IB = 20 mA VCE(sat) - - 0.5 V Base Emitter Voltage at IC = 10 mA, VCE = 1 V VBE 0.5 - 0.8 V Transition Freq |
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NPN Transistor 1) High gain bandwidth product 2) Small output capacitance 3) Low noise figure 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Parameter Collector Base Voltage Collector Emitter Voltage |
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NPN Silicon Epitaxial Planar Transistor VCB=10V, f=1MHz Current Gain Bandwidth Product at VCE=10V, IC=3mA Power Gain at VCE=10V, f=200MHz, RS=50Ω, IE=-3mA Noise Figure at VCE=10V, IE=-3mA f=200MHz, RS=50Ω Symbol hFE hFE hFE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IAGC Cre fT Gpe NF Min. 40 60 |
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Desde 2024. D4U Semiconductor.
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