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BYD Microelectronics |
Dual N-Channel MOSFET • VDS (V) =20V • Low on-state resistance RDS(on) ≤ 22.0mΩ TYP(VGS = 4.5V, ID = 3.0A) RDS(on) ≤ 32.0mΩ TYP(VGS = 2.5V, ID = 3.0A) Absolute Maximum Ratings (Tc = 25℃) Symbol VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg Parameter Drain to Source Voltage G |
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Desde 2024. D4U Semiconductor.
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