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BYD Microelectronics |
Dual N-Channel MOSFET • VDS (V) =60V • Low on-state resistance RDS(on) = 89 mΩ MAX (VGS = 10V, ID =3.6A) RDS(on) = 104 mΩ MAX (VGS = 4.5V, ID = 3.4A) • Fast switching speed Absolute Maximum Ratings (Ta = 25℃) PARAMETER SYMBOL LIMIT Drain to Source Voltage VDSS 60 |
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Desde 2024. D4U Semiconductor.
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