BOURNS BD5 Hoja de datos

No.	parte #	Fabricante	Descripción
1	BD545	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTORS uited. 2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. VEBO IC Ptot Ptot TA Tj Tstg TL VCEO V CBO SYMBOL VALUE 40 60 80 100 40 60 80 100 5 15 85 3.5 -65
2	BD545A	Bourns	NPN SILICON POWER TRANSISTORS en circuited. 2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. SYMBOL VCBO VCEO VEBO IC Ptot Ptot TA Tj Tstg TL VALUE 40 60 80 100 40 60 80 100 5 15 85
3	BD546B	Bourns Electronic Solutions	PNP SILICON POWER TRANSISTORS
4	BD546A	Bourns Electronic Solutions	PNP SILICON POWER TRANSISTORS
5	BD544	BOURNS	PNP SILICON POWER TRANSISTORS
6	BD544A	BOURNS	PNP SILICON POWER TRANSISTORS
7	BD544B	BOURNS	PNP SILICON POWER TRANSISTORS
8	BD544C	BOURNS	PNP SILICON POWER TRANSISTORS
9	BD545C	Bourns	NPN SILICON POWER TRANSISTORS en circuited. 2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. SYMBOL VCBO VCEO VEBO IC Ptot Ptot TA Tj Tstg TL VALUE 40 60 80 100 40 60 80 100 5 15 85
10	BD545B	Bourns	NPN SILICON POWER TRANSISTORS en circuited. 2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. SYMBOL VCBO VCEO VEBO IC Ptot Ptot TA Tj Tstg TL VALUE 40 60 80 100 40 60 80 100 5 15 85
11	BD546C	Bourns Electronic Solutions	PNP SILICON POWER TRANSISTORS
12	BD546	Bourns Electronic Solutions	PNP SILICON POWER TRANSISTORS uited. 2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. VEBO IC Ptot Ptot TA Tj Tstg TL VCEO V CBO SYMBOL VALUE -40 -60 -80 -100 -40 -60 -80 -100 -5 -15 8