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BLUE ROCKET ELECTRONICS |
Schottky Diode ，，。 Low forward voltage drop,low power losses,High efficiency operation. / Applications 、、，，。 For use in low voltage,high frequency inverters,free wheeling,and polarity protection applications. / Equivalent Circuit / Pinning 12 3 4 PIN1：An |
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BL GALAXY ELECTRICAL |
SCHOTTKY BARRIER RECTIFIER High s urge capacity. For us e in low voltage, high frequency inverters , free 111wheeling, and polarity protection applications . Metal s ilicon junction, m ajority carrier conduction. High current capacity, low forward voltage drop. Guard ring for |
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Cambridge Silicon Radio |
Single Chip Bluetooth ! Fully Qualified Bluetooth system ! Bluetooth v1.2 Specification Compliant ! Kalimba DSP Open Platform Co-Processor ! Full Speed Bluetooth Operation with Full Piconet Support ! Scatternet Support ! Low Power 1.8V Operation ! 7 x 7mm 120-ball VFBGA P |
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BL GALAXY ELECTRICAL |
SCHOTTKY BARRIER RECTIFIER High s urge capacity. For us e in low voltage, high frequency inverters , free 111wheeling, and polarity protection applications . Metal s ilicon junction, m ajority carrier conduction. High current capacity, low forward voltage drop. Guard ring for |
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BLUE ROCKET ELECTRONICS |
Schottky Diode ，，。 Low forward voltage drop,low power losses,High efficiency operation. / Applications 、、，，。 For use in low voltage,high frequency inverters,free wheeling,and polarity protection applications. / Equivalent Circuit / Pinning 12 3 PIN1：Anode |
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National Semiconductor |
Family of 16-bit CAN-enabled CompactRISC Microcontrollers and low power consumption resulting in decreased system cost. The device offers the high performance of a RISC architecture while retaining the advantages of a traditional Com- Block Diagram Fast Clk Slow Clk* CR16CAN FullCAN 2.0B Clock Generator Po |
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BL |
(MBR25xxCT) SCHOTTKY BARRIER RECTIFIER GALAXY ELECTRICAL MBR2530CT---MBR25100CT VOLTAGE RANGE: 30 - 100 V CURRENT: 30 A SCHOTTKY BARRIER RECTIFIER High s urge capacity. For us e in low voltage, high frequency inverters , free 111wheeling, and polarity protection applications . Metal s |
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Cambridge Silicon Radio |
Single Chip Bluetooth Fully Qualified Bluetooth v1.2 system Enhanced Data Rate (EDR) compliant with v0.9 of specification for both 2Mbps and 3Mbps modulation modes _äìÉ`çêÉ»QJbñíÉêå~ä Single Chip Bluetooth® v1.2 System with EDR Pre-Production Information Datasheet Fo |
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Cambridge Silicon Radio |
Single Chip Bluetooth Fully Qualified Bluetooth v2.0+EDR Enhanced Data Rate (EDR) compliant with v2.0.E.2 of specification for both 2Mbps and 3Mbps modulation modes Full Speed Bluetooth Operation with Full Piconet Support Scatternet Support 1.8V core, 1.8 to 3.6V I/O |
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BLUE ROCKET ELECTRONICS |
Silicon NPN transistor ,。 High fT, small NF. / Applications 。 High frequency amplifier applications. / Equivalent Circuit / Pinning 3 2 1 PIN 1：Emitter PIN 2：Base PIN 3：Collector / hFE Classifications & Marking hFE Range Marking 30～250 H7H http://www.fsbrec. |
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BLUE ROCKET ELECTRONICS |
Schottky Diode ，，。 Low forward voltage drop,low power losses,High efficiency operation. / Applications 、、，，。 For use in low voltage,high frequency inverters,free wheeling,and polarity protection applications. / Equivalent Circuit / Pinning PIN1：Anode PIN |
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BLUE ROCKET ELECTRONICS |
Schottky Barrier Diode ，。 Low power loss, high efficiency. / Applications 、、，，。 For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. / Equivalent Circuit / Pinning PIN1：Anode PIN 2：Cathode PIN 3：Anode / hFE Cla |
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BLUE ROCKET ELECTRONICS |
Schottky Barrier Diode ，。 Low power loss,high efficiency. / Applications 、、，，。 For use in low voltage,high frequency inverters, free wheeling, and polarity protection applications. / Equivalent Circuit / Pinning 123 PIN1：Anode PIN 2：Cathode PIN 3：Anode / hFE C |
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BLUE ROCKET ELECTRONICS |
Schottky Diode ，，。 Low forward voltage drop,low power losses,High efficiency operation. / Applications 、、，，。 For use in low voltage,high frequency inverters,free wheeling,and polarity protection applications. / Equivalent Circuit / Pinning 12 3 4 PIN1：An |
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BLUE ROCKET ELECTRONICS |
Schottky Diode ，。 Low power loss, high efficiency. / Applications 、、，，。 For use in low voltage,high frequency inverters, free wheeling, and polarity protection applications. / Equivalent Circuit / Pinning 12 3 4 PIN1：Anode PIN 2、4：Cathode PIN 3：Anode |
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BLUE ROCKET ELECTRONICS |
Schottky Barrier Diode ，。 Low power loss,high efficiency. DATA SHEET / Applications 、、，，。 For use in low voltage,high frequency inverters, free wheeling, and polarity protection applications. / Equivalent Circuit / Pinning 123 PIN1：Anode PIN 2：Cathode PIN 3：Ano |
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BLUE ROCKET ELECTRONICS |
Silicon NPN transistor ，，。 High current gain, low noise figure, high power gain. / Applications 2.5GHz 。 Amplifiers for operation up to 2.5GHz applicationgs. / Equivalent Circuit / Pinning 3 2 1 PIN1：Emitter PIN 2：Base PIN 3：Collector / hFE Classifications |
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BL |
(MBR25xxCT) SCHOTTKY BARRIER RECTIFIER GALAXY ELECTRICAL MBR2530CT---MBR25100CT VOLTAGE RANGE: 30 - 100 V CURRENT: 30 A SCHOTTKY BARRIER RECTIFIER High s urge capacity. For us e in low voltage, high frequency inverters , free 111wheeling, and polarity protection applications . Metal s |
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BL |
(MBR25xxCT) SCHOTTKY BARRIER RECTIFIER GALAXY ELECTRICAL MBR2530CT---MBR25100CT VOLTAGE RANGE: 30 - 100 V CURRENT: 30 A SCHOTTKY BARRIER RECTIFIER High s urge capacity. For us e in low voltage, high frequency inverters , free 111wheeling, and polarity protection applications . Metal s |
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BL |
(MBR25xxCT) SCHOTTKY BARRIER RECTIFIER GALAXY ELECTRICAL MBR2530CT---MBR25100CT VOLTAGE RANGE: 30 - 100 V CURRENT: 30 A SCHOTTKY BARRIER RECTIFIER High s urge capacity. For us e in low voltage, high frequency inverters , free 111wheeling, and polarity protection applications . Metal s |
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Desde 2024. D4U Semiconductor.
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