No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Avago Technologies |
Very Low Noise Amplifier x Optimum frequency of operation 400 MHz – 1.5 GHz x Very low noise figure x High gain x High linearity performance x Excellent isolation x GaAs E-pHEMT Technology[1] x Low cost small package size: 4.0 x 4.0 x 0.85 mm3 Specifications 900 MHz; Q1: 5 V |
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Avago Technologies |
Dual LNA for balanced applications in the 900 MHz band. Shutdown functionality is achieved using a single DC voltage input pin.High linearity is achieved through the use of Avago Technologies’ proprietary GaAs Enhancement-mode pHEMT process1. It is housed in |
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Avago Technologies |
Dual LNA for balanced applications in the 1950 MHz band. Shutdown functionality is achieved using a single DC voltage input pin. High linearity is achieved through the use of Avago Technologies’ proprietary GaAs Enhancement-mode pHEMT process1. It is housed i |
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Avago Technologies |
High-Gain GPS LNA Very Low Noise Figure High Gain and Linearity Low External Component Count Low Shutdown Current CMOS compatible shutdown pin (SD) current @ Vsd= 1.8V : 0.11mA Useable down to 1.8V supply Adjustable current via single external resistor/v |
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Avago Technologies |
Dual LNA for balanced applications in the 2600MHz band. Shutdown functionality is achieved using a single DC voltage input pin.High linearity is achieved through the use of Avago Technologies’ proprietary GaAs Enhancement-mode pHEMT process [1]. It is housed |
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Avago Technologies |
Very Low Noise Amplifier x Optimum frequency of operation 1.5 GHz – 2.5 GHz x Very low noise figure x High gain x High linearity performance x Excellent isolation x GaAs E-pHEMT Technology[1] x Low cost small package size: 4.0 x 4.0 x 0.85 mm3 Specifications 1.95 GHz; Q1: 5 |
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Avago Technologies |
High Linearity Low Noise Amplifier x Low noise figure x High gain x High linearity performance x Excellent isolation x GaAs E-pHEMT Technology [1] x Low cost small package size: 4.0 x 4.0 x 0.85 mm3 x Excellent uniformity in product specifications x Meets MSL1, Lead-free and halogen |
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Avago Technologies |
5.1-5.9GHz 3x3mm WiFi and WiMAX Power Amplifier Advanced GaAs E-pHEMT 50 all RF ports Full performance across entire 5.1-5.9GHz Operates from 4.9-5.9 GHz Integrated CMOS compatible pins for shutdown 3 to 5V supply ESD protection all ports above 1000V HBM Small size: 3 x 3 x 1 mm |
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Avago Technologies |
High Linearity Active Bias Low Noise Amplifier • Low noise figure • High gain • Good IRL • High linearity performance • High reverse isolation • Externally adjustable supply current • Externally adjustable gain • GaAs E-pHEMT Technology [1] • Low cost QFN package • Excellent uniformity |
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Avago Technologies |
High-Gain Low Current Low Noise Amplifier Very Low Noise Figure : 0.97dB typical High Gain : 17.9 dB typical High IIP3 and IP1dB Advanced GaAs E-pHEMT Low external component count Shutdown current : < 5 uA CMOS compatible shutdown pin (SD) current at 2.7V drawing 80uA Useable |
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