| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ATMEL Corporation |
One-channel Touch Sensor • Number of Keys: – One – Configurable as either a single key or a proximity sensor • Technology: – Patented spread-spectrum charge-transfer (direct mode) • Key outline sizes: – 6 mm x 6 mm or larger (panel thickness dependent); widely different size |
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ATMEL |
16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 55 ns • Sector Erase Architecture – Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout |
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ATMEL |
512K (64K x 8) Single 2.7-volt Battery-Voltage Flash Memory • Single Supply Voltage Range, 2.7V to 3.6V • Single Supply for Read and Write • Fast Read Access Time – 70 ns • Internal Program Control and Timer • 8K Bytes Boot Block with Lockout • Fast Erase Cycle Time – 10 Seconds • Byte-by-Byte Programming – 3 |
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ATMEL |
8-Megabit (512K x 16) CMOS Flash Memory • Low Voltage Operation – 2.7V Read – 5V Program/Erase • Fast Read Access Time - 120 ns • Internal Erase/Program Control • Sector Architecture – One 8K Words (16K bytes) Boot Block with Programming Lockout – Two 8K Words (16K bytes) Parameter Blocks |
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ATMEL |
2-Megabit 5-volt Only Flash Memory • Single-voltage Operation – 5V Read – 5V Reprogramming • Fast Read Access Time - 55 ns • Internal Program Control and Timer • Sector Architecture – One 16K Byte Boot Block with Programming Lockout – Two 8K Byte Parameter Blocks – Two Main Memory Blo |
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ATMEL |
8-Megabit 5-volt Only Flash Memory • Single Voltage Operation – 5V Read – 5V Reprogramming • Fast Read Access Time - 90 ns • Internal Program Control and Timer • 16K bytes Boot Block With Lockout • Fast Erase Cycle Time - 10 seconds • Byte-By-Byte Programming - 10 µs/Byte Typical • Ha |
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ATMEL |
16-megabit 5-volt Only Flash Memory • 4.5V to 5.5V Read/Write • Access Time – 90 ns • Sector Erase Architecture – Thirty 32K Word (64K byte) Sectors with Individual Write Lockout – Eight 4K Word (8K byte) Sectors with Individual Write Lockout – Two 16K Word (32K byte) Sectors with Indi |
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ATMEL Corporation |
AT49F1024 • Single Voltage Operation • • • • • • • • • – 5V Read – 5V Reprogramming Fast Read Access Time - 45 ns Internal Program Control and Timer 8K word Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Word By Word Programming - 10 µs/Word Typica |
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ATMEL |
8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory • Single Supply for Read and Write: 2.7V to 3.3V (BV), 3.0V to 3.3V (LV) • Access Time – 90 ns • Sector Erase Architecture Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout Two 16K Word (32K Byte) Sectors with Individual Write Lockou |
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ATMEL Corporation |
QTouch 8-key Touch Sensor • QTouch® Sensor Channels – Up to 8 keys • Integrated Haptic Engine – Haptic events may be triggered by touch detection or controlled by a host microcontroller over SPI Data Acquisition – QTouchADC key measurement/touch detection method – Configurab |
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ATMEL Corporation |
4-Megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory • Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time - 120 ns • Internal Program Control and Timer • 16K bytes Boot Block With Lockout • Fast Chip Erase Cycle Time - 10 seconds • Byte-by-Byte Programming - |
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ATMEL |
1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer • Sector Architecture – One 16-Kbyte Boot Block with Programming Lockout – Two 8-Kbyte Parameter Blocks – Two |
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ATMEL |
2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer • Sector Architecture – One 16K Bytes Boot Block with Programming Lockout – Two 8K Bytes Parameter Blocks – Tw |
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ATMEL |
Secure 5K - 40K Gates of AT40K FPGA • Multichip Module Containing Field Programmable System Level Integrated Circuit (FPSLIC®) and Secure Configuration EEPROM Memory • 512 Kbits to 1 Mbit of Configuration Memory with Security Protection and In-System Programming (ISP) • Field Programma |
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ATMEL |
Secure 5K - 40K Gates of AT40K FPGA • Multichip Module Containing Field Programmable System Level Integrated Circuit (FPSLIC®) and Secure Configuration EEPROM Memory • 512 Kbits to 1 Mbit of Configuration Memory with Security Protection and In-System Programming (ISP) • Field Programma |
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ATMEL |
5K - 40K Gates of AT40K FPGA • Monolithic Field Programmable System Level Integrated Circuit (FPSLIC®) – AT40K SRAM-based FPGA with Embedded High-performance RISC AVR® Core, Extensive Data and Instruction SRAM and JTAG ICE • 5,000 to 40,000 Gates of Patented SRAM-based AT40K FPG |
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ATMEL Corporation |
Missed Watchdog Timer Reset • • • • • • • • • • • • • • • • AVR® 8-bit RISC Microcontroller with 83 ns Instruction Cycle Time USB Hub with One Attached and Four External Ports USB Keyboard Function with Four Programmable Endpoints 16 KB Program Memory, 512-Byte Data SRAM 32 x 8 |
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ATMEL Corporation |
32-megabit 2.7-volt Only DataFlash • Single 2.7V - 3.6V Supply • Serial Peripheral Interface (SPI) Compatible • 20 MHz Max Clock Frequency • Page Program Operation – Single Cycle Reprogram (Erase and Program) – 8192 Pages (528 Bytes/Page) Main Memory • Supports Page and Block Erase Op |
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ATMEL |
1-Megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory • Single Supply Voltage, Range 2.7V to 3.6V • Single Supply for Read and Write • Fast Read Access Time - 55 ns • Internal Program Control and Timer • 8K bytes Boot Block With Lockout • Fast Erase Cycle Time - 10 seconds • Byte By Byte Programming - 3 |
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ATMEL |
2-Megabit (256K x 8) Single 2.7-volt Battery-Voltage Flash Memory • Single Supply Voltage, Range 2.7V to 3.6V • Single Supply for Read and Write • Fast Read Access Time - 70 ns • Internal Program Control and Timer • 8K bytes Boot Block With Lockout • Fast Erase Cycle Time - 10 seconds • Byte By Byte Programming - 3 |
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Desde 2024. D4U Semiconductor.
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