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Analog Power |
N-Channel MOSFET d Storage Temperature Range VDS VGS TA=25oC TA=70oC ID 60 V ±20 ±4.0 ±3.3 A IDM ±25 IS 2 A TA=25oC TA=70oC PD 2.1 W 1.3 TJ, Tstg -55 to 150 oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 10 sec t <= 5 sec |
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Analog Power |
N-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM90N06-04D VDS (V) 60 PRODUCT SUMMARY rDS(on) (mΩ) 4.8 |
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Analog Power |
N-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Automotive Systems • DC/DC Conversion Circuits • Battery Powered Power Tools AM90N06-02PF VDS (V) 60 PRODUCT SUMMARY rDS(on) (mΩ) 2.6 @ VGS = 1 |
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Analog Power |
N-Channel MOSFET rent (Diode Conduction)a VDS 30 VGS ±20 TA=25oC TA=70oC ID 9.0 7.4 IDM 30 IS 1.6 Power Dissipationa TA=25oC TA=70oC PD 3.1 2.0 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W oC THERMAL RESISTANCE |
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Analog Power |
N-Channel MOSFET TA=25oC TA=70oC ID IDM 30 V ±20 8.1 6.5 A 30 Continuous Source Current (Diode Conduction)a IS 2.1 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD 3.1 W 2.0 TJ, Tstg -55 to 150 oC THERMAL RESI |
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Analog Power |
MOSFET iode Conduction) IS TC =25 C P D Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 C T H E RMA L RESIST A NC E RA TING S Param eter Sym bol M axim umJunction-to-Am bient M axim umJunction-to-Case a Maxim u m U nits 62.5 0.5 o |
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Analog Power |
MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits PRODUCT SUMMARY rDS(on) (mΩ) 12 @ VGS = -10V 16 @ VGS = -4. |
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Analog Power |
P-Channel 100-V (D-S) MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM90P10-30P VDS (V) -100 PRODUCT SUMMARY rDS(on) (mΩ) 38 |
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Analog Power |
N-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Off-line Power Supplies • Electronic Ballasts • High Power LED Lighting AM9N65P VDS (V) 650 PRODUCT SUMMARY rDS(on) (Ω) 1.7 @ VGS = 10V 1.8 @ V |
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Analog Power |
P-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM90P10-300B VDS (V) -100 PRODUCT SUMMARY rDS(on) (mΩ) 3 |
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Analog Power |
P-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM90P06-20B VDS (V) -60 PRODUCT SUMMARY rDS(on) (mΩ) 20 |
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Analog Power |
P-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM90P06-06P VDS (V) -60 PRODUCT SUMMARY rDS(on) (mΩ) 6.2 |
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Analog Power |
P-Channel MOSFET 25oC ID IDM IS TC=25oC PD TJ, Tstg -40 ±20 90 390 110 300 -55 to 175 V A A W oC THERMALRESISTANCERATINGS Parameter Symbol MaximumJunction-to-Ambienta RθJA MaximumJunction-to-Case RθJC Notes a. Package Limited b. Pulse width limited by maxim |
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Analog Power |
P-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Load Switches • DC/DC Conversion • Motor Drives AM90P02-02P VDS (V) -20 PRODUCT SUMMARY rDS(on) (mΩ) 2.5 @ VGS = -4.5V 3.2 @ VGS = -2.5V ID (A |
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Analog Power |
N-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM90N08-10B VDS (V) 80 PRODUCT SUMMARY rDS(on) (mΩ) 11 @ |
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Analog Power |
N-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Automotive Systems • DC/DC Conversion Circuits • Battery Powered Power Tools AM90N06-15PCFM VDS (V) 60 PRODUCT SUMMARY rDS(on) (mΩ) 12 @ VGS = |
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Analog Power |
N-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Battery Operated Power Tools • Automotive Systems • Industrial DC/DC Conversion Circuits AM90N04-02B VDS (V) 40 PRODUCT SUMMARY rDS(on) (mΩ) 2. |
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Analog Power |
N-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Automotive Systems • DC/DC Conversion Circuits • Battery Powered Power Tools AM90N04-01P VDS (V) 40 PRODUCT SUMMARY rDS(on) (mΩ) 2.9 @ VGS = 10 |
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Analog Power |
N-Channel MOSFET 55 to 175 V A A W oC THERMALRESISTANCERATINGS Parameter Symbol MaximumJunction-to-Ambienta RθJA MaximumJunction-to-Case RθJC Notes a. Package Limited b. Pulse width limited by maximum junction temperature Maximum Units 62.5 oC/W 0.5 oC/W P |
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Analog Power |
N-Channel MOSFET 20 ±8 94 120 30 50 -55 to 175 V A A W oC THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta RθJA Maximum Junction-to-Case RθJC Maximum 50 3.0 Units oC/W oC/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse wid |
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Desde 2024. D4U Semiconductor.
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