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Analog Power |
N & P-Channel MOSFET Voltage Continuous Drain Currenta Pulsed Drain Currentb VDS VGS TA=25oC TA=70oC ID IDM 30 -30 V ±20 ±20 6.9 -5.2 5.4 -6.8 A 20 -20 Continuous Source Current (Diode Conduction)a IS 1.3 -1.3 A Power Dissipationa TA=25oC TA=70oC |
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Analog Power |
MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits PRODUCT SUMMARY rDS(on) (mΩ) 26 @ VGS = 10V 36 @ VGS = 4.5V |
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Analog Power |
P-Channel MOSFET rrent (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range VDS VGS TA=25oC ID IDM -20 V ±12 41 A ±40 IS -30 A TA=25oC PD 50 W TJ, Tstg -55 to 175 oC THERMAL RESISTANCE RATINGS Parameter Symbol Maximum J |
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Analog Power |
N & P-Channel MOSFET 0 -50 Continuous Source Current (Diode Conduction)a IS 1.3 -2.1 A Power Dissipationa TA=25oC TA=70oC PD 2.1 2.1 W 1.3 1.3 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 oC THERMAL RESISTANCE RATINGS Parameter |
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Analog Power |
N-Channel MOSFET n)a IS 2.9 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD 3.1 W 2.2 TJ, Tstg -55 to 150 oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 10 sec Steady State Symbol RθJA |
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Analog Power |
N-Channel MOSFET 2.3 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD 3.1 W 2.2 TJ, Tstg -55 to 150 oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 10 sec Steady State Symbol RθJA Maximum |
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Analog Power |
N-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits PRODUCT SUMMARY rDS(on) (mΩ) 32 @ VGS = 10V 42 @ VGS = 4.5V |
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Analog Power |
N-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters AM40N10-30D VDS (V) 100 PRODUCT SUMM |
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Analog Power |
P-Channel MOSFET DM -40 V ±20 36 A ±40 IS -30 A TA=25oC PD 50 W TJ, Tstg -55 to 175 oC THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta RθJA Maximum Junction-to-Case RθJC Maximum 50 3.0 Units oC/W oC/W Notes a. Surface Mounte |
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Analog Power |
P-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM40P03-20I VDS (V) -30 PRODUCT SUMMARY rDS(on) (mΩ) 20 |
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Analog Power |
N & P-Channel MOSFET Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb VDS VGS TA=25oC TA=70oC ID IDM 30 -30 V ±20 ±20 6.9 -5.2 5.4 -6.8 A 20 -20 Continuous Source Current (Diode Conduction)a IS 1.3 -1.3 A P |
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Analog Power |
N & P-Channel MOSFET 0 -20 Continuous Source Current (Diode Conduction)a IS 1.3 -1.3 A Power Dissipationa TA=25oC TA=70oC PD 2.1 2.1 W 1.3 1.3 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 oC THERMAL RESISTANCE RATINGS Parameter |
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Analog Power |
N-Channel MOSFET A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC PD 3.1 W TJ, Tstg -55 to 150 oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 10 sec Steady State Notes a. Surface Mounted on 1” x 1” FR |
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Analog Power |
N-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Automotive Systems • DC/DC Conversion Circuits • Battery Powered Power Tools AM400N04-01B VDS (V) 40 PRODUCT SUMMARY rDS(on) (mΩ) 1.55 @ VGS = |
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Analog Power |
P-Channel MOSFET oC ID IDM -40 V ±20 36 A ±40 IS -30 A TA=25oC PD 50 W TJ, Tstg -55 to 175 oC THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta RθJA Maximum Junction-to-Case RθJC Maximum 50 3.0 Units oC/W oC/W Notes a. Surface |
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Analog Power |
P-Channel MOSFET IDM -30 V ±20 32 A ±40 IS -30 A TA=25oC PD 50 W TJ, Tstg -55 to 175 oC THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta RθJA Maximum Junction-to-Case RθJC Maximum 50 3.0 Units oC/W oC/W Notes a. Surface Moun |
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Analog Power |
P-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM40P03-20D VDS (V) -30 PRODUCT SUMMARY rDS(on) (mΩ) 20 |
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Analog Power |
N & P-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits VDS (V) 150 -150 PRODUCT SUMMARY rDS(on) (mΩ) 255 @ VGS = |
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Analog Power |
N & P-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • DC/DC Conversion • Power Routing • Motor Drives VDS (V) 30 -30 PRODUCT SUMMARY rDS(on) (mΩ) 16 @ VGS = 10V 20 @ VGS = 4.5V 24 @ VGS = -10V 38 @ |
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Analog Power |
N & P-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • DC/DC Conversion • Power Routing • Motor Drives VDS (V) 30 -30 PRODUCT SUMMARY rDS(on) (mΩ) 16 @ VGS = 10V 20 @ VGS = 4.5V 23 @ VGS = -10V 33 @ |
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Desde 2024. D4U Semiconductor.
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