| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Analog Power |
N-Channel 100-V (D-S) MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM2374N VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 92 @ VG |
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Power Analog Micoelectronics |
4-Channel Programmable LED Current Sink n n n n n Description The PAM2810 provides 4 regulated current sinks, capable of sinking up to 40mA current to accommodate 4 white LEDs. It requires no charge pump, has no noise and EMI, and significantly improves the efficiency in Li bettery range. |
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Power Analog Micoelectronics |
1A LED DRIVER Description n Simple low parts count The PAM2861 is a continuous mode inductive n Internal 40V NDMOS switch step-down converter, designed for driving single n 1A output current or multiple series connected LEDs efficiently n Single pin on/off |
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Analog Power |
N-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Hot Swap Inrush Limit Circuits • Uninterruptible Power Supplies and Inverters • Motor Speed Controls AM290N10-02FP VDS (V) 100 PRODUCT SUMMARY |
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Analog Power |
N-Channel MOSFET ure Range VDS VGS TA=25oC TA=70oC ID 20 V ±8 3.4 2.2 A IDM 10 IS 1.6 A TA=25oC TA=70oC PD 1.25 W 0.8 TJ, Tstg -55 to 150 oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 5 sec Steady-State Symbol Maxim |
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Power Analog Micoelectronics |
1W High Power White LED Driver n LED Power Efficiency: up to 90% n LED Current Accuracy: ± 3%(V IN=3.2V to 1.1 V @V F=3.4V) n Low Start-Up Voltage: 0.9V(I LED=243mA) n Low Hold Voltage:0.65V(I LED=95mA) n Internal 2A MOSFET Switch n 1.0MHz Switching Frequency n Uses Small,Low Prof |
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Power Analog Micoelectronics |
3W High Power White LED Driver n LED Power Efficiency: up to 90% n Current Accuracy: ± 5%(V IN=3.6V to 1.8V @V F=3.7V) n Low Start-Up Voltage: 0.9V(I LED=270mA) n Low Hold Voltage:0.75V(I LED=200mA) n 1MHz Switching Frequency n Uses small, Low Profile External Components n Low RDS |
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Analog Power |
P-Channel 20-V (D-S) MOSFET A W o A Continuous Source Current (Diode Conduction) Power Dissipation a a IS TA=25 C TA=70 C o o PD Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t < |
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Power Analog Micoelectronics |
PWM STEP-UP DC-DC CONVERTER Greater than 90% Efficiency Adjustable Output Voltage Up to 24V Internal 24V Power MOSFET Peak Current 3A,4.5A,5.5A 520kHz Frequency Built-in Over-Voltage Protection (OVP) Open Protection Programmable Soft-Start Function Thermal Shu |
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Analog Power |
N-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM20N06-90D VDS (V) 60 PRODUCT SUMMARY rDS(on) (mΩ) 94 @ |
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Analog Power |
P-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM20P10-205D VDS (V) -100 PRODUCT SUMMARY rDS(on) (mΩ) 2 |
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Analog Power |
N-Channel MOSFET n)a IS 0.45 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD TJ, Tstg 0.5 0.42 -55 to 150 W oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 5 sec Steady-State Notes a. Sur |
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Analog Power |
P-Channel MOSFET S 0.24 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD TJ, Tstg 0.36 0.29 -55 to 150 W oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 5 sec Steady-State Notes a. Surface |
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Analog Power |
N-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM2322N VDS (V) 80 PRODUCT SUMMARY rDS(on) (mΩ) 24 @ VGS |
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Analog Power |
P-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM2321P VDS (V) -20 PRODUCT SUMMARY rDS(on) (mΩ) 79 @ VG |
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Analog Power |
N-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters AM2370N VDS (V) 100 PRODUCT SUMMARY |
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Analog Power |
N-Channel MOSFET Dissipationa Operating Junction and Storage Temperature Range VDS VGS TA=25oC TA=70oC ID 60 V ±20 2.8 1.8 A IDM ±15 IS 1.7 A TA=25oC TA=70oC PD 1.3 W 0.8 TJ, Tstg -55 to 150 oC THERMAL RESISTANCE RATINGS Parameter Maximum Junctio |
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Analog Power |
N-Channel MOSFET ationa Operating Junction and Storage Temperature Range VDS VGS TA=25oC TA=70oC ID 40 V ±20 5.2 4.1 A IDM 30 IS 1.6 A TA=25oC TA=70oC PD 1.3 W 0.8 TJ, Tstg -55 to 150 oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Amb |
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Analog Power |
N-Channel MOSFET er Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD 1.3 W 0.8 TJ, Tstg -55 to 150 oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 5 sec Steady-State Symbol R?JA Maximum 100 166 Unit |
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Analog Power |
N-Channel MOSFET .6 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD 1.3 W 0.8 TJ, Tstg -55 to 150 oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 5 sec Steady-State Symbol Maximum Units RT |
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Desde 2024. D4U Semiconductor.
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