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Analog Power |
N-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Power Supplies • Motor Drives • Consumer Electronics AM12N65PCFM VDS (V) 650 PRODUCT SUMMARY rDS(on) (mΩ) 800 @ VGS = 10V 850 @ VGS = 6V ID (A |
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Analog Power |
N-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM12N65P VDS (V) 650 PRODUCT SUMMARY rDS(on) (mΩ) 800 @ |
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Analog Power |
N-Channel 40-V (D-S) MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM100N04-02D VDS (V) 40 PRODUCT SUMMARY rDS(on) (mΩ) 2.3 |
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Analog Power |
N-Channel MOSFET 3.5 A ±20 Continuous Source Current (Diode Conduction)a IS 1.6 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD 1.56 W 0.81 TJ, Tstg -55 to 150 oC THERMAL RESISTANCE RATINGS Parameter Maximum Ju |
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Analog Power |
N-Channel 30-V (D-S) MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits PRODUCT SUMMARY rDS(on) (mΩ) 90 @ VGS = 10V 130 @ VGS = 4.5 |
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Analog Power |
N-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Off-line Power Supplies • Electronic Ballasts • High Power LED Lighting AM12N50P PRODUCT SUMMARY VDS (V) rDS(on) (mΩ) 500 520 @ VGS = 10V ID |
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Analog Power |
N-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM12N65B VDS (V) 650 PRODUCT SUMMARY rDS(on) (mΩ) 800 @ |
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Analog Power |
N-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Power Supplies • Motor Drives • Consumer Electronics AM12N70P PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 700 1 @ VGS = 10V ID (A) 12a DRAIN connec |
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Analog Power |
P-Channel MOSFET 3.7 -3.0 A -10 Continuous Source Current (Diode Conduction)a IS ±1.4 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD 1.56 W 0.81 TJ, Tstg -55 to 150 oC THERMAL RESISTANCE RATINGS Parameter Maximu |
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Analog Power |
P-Channel MOSFET 3.1 -2.5 A -10 Continuous Source Current (Diode Conduction)a IS ±1.4 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD 1.56 W 0.81 TJ, Tstg -55 to 150 oC THERMAL RESISTANCE RATINGS Parameter Maximu |
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Analog Power |
N-Channel MOSFET issipationa Operating Junction and Storage Temperature Range VDS VGS TA=25oC TA=70oC ID 30 V ±8 5.5 4.5 A IDM ±20 IS 1.6 A TA=25oC TA=70oC PD 1.56 W 0.81 TJ, Tstg -55 to 150 oC THERMAL RESISTANCE RATINGS Parameter Maximum Juncti |
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Analog Power |
Dual N-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • DC/DC Conversion Circuits • Motor Drives VDS (V) 60 PRODUCT SUMMARY rDS(on) (Ω) 2 @ VGS = 10V 3 @ VGS = 4.5V ID (A) 0.32 0.26 ABSOLUTE MAXIMUM |
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Analog Power |
N-Channel 20-V (D-S) MOSFET s VDS 20 V VGS 8 o o TA=25 C TA=70 C ID IDM 1.6 1.3 5 0.4 0.3 0.21 o A A W Continuous Source Current (Diode Conduction) Power Dissipation a a o o IS PD TA=25 C TA=70 C C Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 TH |
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Analog Power |
P-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM10P10-530I VDS (V) -100 PRODUCT SUMMARY rDS(on) (mΩ) 5 |
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Analog Power |
N-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Automotive Systems • DC/DC Conversion Circuits • Battery Powered Power Tools AM160N03-03D PRODUCT SUMMARY VDS (V) rDS(on) (mΩ) 30 3.9 @ VGS = |
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Analog Power |
N-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • LED Inverter Circuits • DC/DC Conversion Circuits • Motor drives AM190N10-04B VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 9 @ VGS = 10V 10.5 @ VGS |
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Analog Power |
P-Channel MOSFET ±0.28 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD 0.34 W 0.22 TJ, Tstg -55 to 150 oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 5 sec Steady-State Symbol RTHJA Maxi |
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Analog Power |
N-Channel MOSFET 25oC TA=70oC ID 60 V ±20 1.7 1.4 A IDM ±20 IS 1.6 A TA=25oC TA=70oC PD 0.34 W 0.22 TJ, Tstg -55 to 150 oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 5 sec Steady-State Symbol Maximum Units RT HJA 100 |
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Analog Power |
N-Channel MOSFET 5 A ±20 Continuous Source Current (Diode Conduction)a IS 1.6 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD 1.56 W 0.81 TJ, Tstg -55 to 150 oC THERMAL RESISTANCE RATINGS Parameter Maximum Juncti |
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Analog Power |
N-Channel MOSFET A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD 0.34 W 0.22 TJ, Tstg -55 to 150 oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 5 sec Steady-State Symbol Maximum Units RT |
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Desde 2024. D4U Semiconductor.
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