Ampleon BLA Hoja de datos

No.	parte #	Fabricante	Descripción
1	BLA9G1011LS-300G	Ampleon	Power LDMOS transistor and benefits  Easy power control  Integrated dual sided ESD protection enables excellent off-state isolation  Enhanced ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (1030 MHz to 1090 MHz)  Internall
2	BLA9G1011LS-300	Ampleon	Power LDMOS transistor and benefits  Easy power control  Integrated dual sided ESD protection enables excellent off-state isolation  Enhanced ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (1030 MHz to 1090 MHz)  Internall
3	BLA9G1011L-300G	Ampleon	Power LDMOS transistor and benefits  Easy power control  Integrated dual sided ESD protection enables excellent off-state isolation  Enhanced ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (1030 MHz to 1090 MHz)  Internall
4	BLA9G1011L-300	Ampleon	Power LDMOS transistor and benefits  Easy power control  Integrated dual sided ESD protection enables excellent off-state isolation  Enhanced ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (1030 MHz to 1090 MHz)  Internall
5	BLA8H0910LS-500	Ampleon	Power LDMOS transistor and benefits  High efficiency  Easy power control  Excellent ruggedness  Integrated ESD protection  Designed for broadband operation (900 MHz to 930 MHz)  Internally input matched  Compliant to Directive 2002/95/EC, regarding Restriction of Ha
6	BLA8H0910L-500	Ampleon	Power LDMOS transistor and benefits  High efficiency  Easy power control  Excellent ruggedness  Integrated ESD protection  Designed for broadband operation (900 MHz to 930 MHz)  Internally input matched  Compliant to Directive 2002/95/EC, regarding Restriction of Ha
7	BLA8G1011LS-300G	Ampleon	Power LDMOS transistor and benefits  Easy power control  Integrated ESD protection  Enhanced ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (1030 MHz to 1090 MHz)  Internally matched for ease of use  Compliant to Directiv
8	BLA8G1011LS-300	Ampleon	Power LDMOS transistor and benefits  Easy power control  Integrated ESD protection  Enhanced ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (1030 MHz to 1090 MHz)  Internally matched for ease of use  Compliant to Directiv
9	BLA8G1011L-300G	Ampleon	Power LDMOS transistor and benefits  Easy power control  Integrated ESD protection  Enhanced ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (1030 MHz to 1090 MHz)  Internally matched for ease of use  Compliant to Directiv
10	BLA8G1011L-300	Ampleon	Power LDMOS transistor and benefits  Easy power control  Integrated ESD protection  Enhanced ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (1030 MHz to 1090 MHz)  Internally matched for ease of use  Compliant to Directiv
11	BLA6H1011-600	Ampleon	LDMOS avionics power transistor and benefits  Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply voltage of 48 V, an IDq of 100 mA, a tp of 50 s with  of 2 %:  Output power = 600 W  Power gain = 17 dB  Efficiency = 52 %  Easy power control  Integ
12	BLA6H0912LS-1000	Ampleon	LDMOS avionics power transistor and benefits  Easy power control  Integrated ESD protection  High flexibility with respect to pulse formats  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (960 MHz to 1215 MHz)  Internall
13	BLA6H0912L-1000	Ampleon	LDMOS avionics power transistor and benefits  Easy power control  Integrated ESD protection  High flexibility with respect to pulse formats  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (960 MHz to 1215 MHz)  Internall
14	BLA6H0912-500	Ampleon	LDMOS avionics radar power transistor and benefits  Typical pulsed RF performance at a frequency of 960 MHz to 1215 MHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 128 s with  of 10 %:  Output power = 450 W  Power gain = 17 dB  Efficiency = 50 %  Easy power control  Inte
15	BLA6G1011LS-200RG	Ampleon	Power LDMOS transistor and benefits  Typical pulsed RF performance at frequencies from 1030 MHz to 1090 MHz, a supply voltage of 28 V and an IDq of 100 mA:  Output power = 200 W  Power gain = 20 dB  Efficiency = 65 %  Easy power control  Integrated ESD protection  E
16	BLA6G1011L-200RG	Ampleon	Power LDMOS transistor and benefits  Typical pulsed RF performance at frequencies from 1030 MHz to 1090 MHz, a supply voltage of 28 V and an IDq of 100 mA:  Output power = 200 W  Power gain = 20 dB  Efficiency = 65 %  Easy power control  Integrated ESD protection  E
17	BLA6G1011-200R	Ampleon	Power LDMOS transistor and benefits  Typical pulsed RF performance at frequencies from 1030 MHz to 1090 MHz, a supply voltage of 28 V and an IDq of 100 mA:  Output power = 200 W  Power gain = 20 dB  Efficiency = 65 %  Easy power control  Integrated ESD protection  E