AiT Semiconductor BC8 Hoja de datos

No.	parte #	Fabricante	Descripción
1	BC847CDW	AiT Semiconductor	GENERAL PURPOSE TRANSISTOR t Collector-Emitter Voltage VCEO 65 45 30 V Collector-Base Voltage VCBO 80 50 30 V Emitter-Base Voltage VEBO 6.0 6.0 5.0 V Collector Current-Continuous IC 100 100 100 mAdc Stresses above may cause permanent damage to the devi
2	BC848BDW	AiT Semiconductor	GENERAL PURPOSE TRANSISTOR t Collector-Emitter Voltage VCEO 65 45 30 V Collector-Base Voltage VCBO 80 50 30 V Emitter-Base Voltage VEBO 6.0 6.0 5.0 V Collector Current-Continuous IC 100 100 100 mAdc Stresses above may cause permanent damage to the devi
3	BC848CDW	AiT Semiconductor	GENERAL PURPOSE TRANSISTOR t Collector-Emitter Voltage VCEO 65 45 30 V Collector-Base Voltage VCBO 80 50 30 V Emitter-Base Voltage VEBO 6.0 6.0 5.0 V Collector Current-Continuous IC 100 100 100 mAdc Stresses above may cause permanent damage to the devi
4	BC846BDW	AiT Semiconductor	GENERAL PURPOSE TRANSISTOR t Collector-Emitter Voltage VCEO 65 45 30 V Collector-Base Voltage VCBO 80 50 30 V Emitter-Base Voltage VEBO 6.0 6.0 5.0 V Collector Current-Continuous IC 100 100 100 mAdc Stresses above may cause permanent damage to the devi
5	BC847BDW	AiT Semiconductor	GENERAL PURPOSE TRANSISTOR t Collector-Emitter Voltage VCEO 65 45 30 V Collector-Base Voltage VCBO 80 50 30 V Emitter-Base Voltage VEBO 6.0 6.0 5.0 V Collector Current-Continuous IC 100 100 100 mAdc Stresses above may cause permanent damage to the devi
6	BC846ADW	AiT Semiconductor	GENERAL PURPOSE TRANSISTOR t Collector-Emitter Voltage VCEO 65 45 30 V Collector-Base Voltage VCBO 80 50 30 V Emitter-Base Voltage VEBO 6.0 6.0 5.0 V Collector Current-Continuous IC 100 100 100 mAdc Stresses above may cause permanent damage to the devi
7	BC817	AiT Semiconductor	GENERAL PURPOSE TRANSISTORS  For general AF applications.  High collector current.  High current gain.  Low collector-emitter saturation voltage ORDERING INFORMATION Package Type Part Number BC817 SOT-23 BC817-16L BC817-25L BC817-40L Note SPQ: 3,000pcs/Reel AiT pr
8	BC848CPDW	AiT Semiconductor	NPN/PNP DUAL TRANSISTOR These transistors are designed for general purpose  Available in SC –88 Package amplifier applications. They are housed in the SC –88 which is designed for low power surface mount applications. PIN DESCRIPTION We declare that the material of pro
9	BC848BPDW	AiT Semiconductor	NPN/PNP DUAL TRANSISTOR These transistors are designed for general purpose  Available in SC –88 Package amplifier applications. They are housed in the SC –88 which is designed for low power surface mount applications. PIN DESCRIPTION We declare that the material of pro
10	BC846BPDW	AiT Semiconductor	NPN/PNP DUAL TRANSISTOR These transistors are designed for general purpose  Available in SC –88 Package amplifier applications. They are housed in the SC –88 which is designed for low power surface mount applications. PIN DESCRIPTION We declare that the material of pro
11	BC847BPDW	AiT Semiconductor	NPN/PNP DUAL TRANSISTOR These transistors are designed for general purpose  Available in SC –88 Package amplifier applications. They are housed in the SC –88 which is designed for low power surface mount applications. PIN DESCRIPTION We declare that the material of pro
12	BC847CPDW	AiT Semiconductor	NPN/PNP DUAL TRANSISTOR These transistors are designed for general purpose  Available in SC –88 Package amplifier applications. They are housed in the SC –88 which is designed for low power surface mount applications. PIN DESCRIPTION We declare that the material of pro