AiT Semiconductor AM8 Hoja de datos

No.	parte #	Fabricante	Descripción
1	AM8205	AiT Semiconductor	N-CHANNEL ENHANCEMENT MODE POWER MOSFET  High power and current handing capability  Lead free product is acquired BVDSS 19.5V RDSON 4.5V 18 mΩ 2.5V 22 mΩ ID SCHEMATIC DIAGRAM 6A APPLICATION  Load switch  PWM Application  Power management ORDERING INFORMATION Package Type Pa
2	AM8958	AiT Semiconductor	N+P PAIR ENHANCEMENT MODE MOSFET The AM8958 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performanc
3	AM8820	AiT Semiconductor	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET  20V/6A, RDS(ON)= 20mΩ(typ.) @ VGS= 10V RDS(ON)= 23mΩ(typ.) @ VGS= 4.5V RDS(ON)= 27mΩ(typ.) @ VGS= 3.1V RDS(ON)= 30mΩ(typ.) @ VGS= 2.5V RDS(ON)= 42mΩ(typ.) @ VGS= 1.8V  Super High Dense Cell Design  Reliable and Rugged  ESD Protected  Lead Free