| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • • • Omnigold™ Metalization System B D C J E I MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O F G H K DIM A B C D E F G H I J .175 / 4.45 .275 / 6.99 K .245 / 6.22 .640 / 16.26 .217 / 5.51 .285 / 7.24 MINIMUM inches / mm 2.0 A 45 V 2 |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 9.5 dB Typical at 400 MHz • Economical .280” Stud Package • Omnigold™ Metalization System B D C J MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O E F G H K DIM A B C D E F G H I J K .175 / 4.45 .275 / 6.99 .245 / 6.22 .640 / 16.26 |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • • • Omnigold™ Metalization System B D C J E I MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O F G H K DIM A B C D E F G H I J .175 / 4.45 .275 / 6.99 K .245 / 6.22 .640 / 16.26 .217 / 5.51 .285 / 7.24 MINIMUM inches / mm 1.1 A 60 V 3 |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 7.5 dB Typical at 400 MHz • Internal Input Matching Network • Omnigold™ Metalization System B G .725/18,42 F E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 4.0 A 60 V 33 V 4.0 V 250 W @ TC = 25 OC -65 OC to +200 OC -65 C to +150 C |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • • • Omnigold™ Metalization System B C J E I D MAXIMUM RATINGS IC VCBO VCES VEBO PDISS TJ TSTG θ JC 1.59 A 65 V 65 V 3.5 V 31.8 W @ TC = 25 OC -65 OC to +200 OC -65 C to +150 C 5.5 OC/W O O DIM A B C D E F G H I J K F G H K MINIMUM inches / mm |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • • • Omnigold™ Metalization System ØB MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 2.0 A 45 V 25 V DIM MINIMUM inches / mm ØC D E F MAXIMUM inches / mm 3.5 V 31.8 W @ TC = 25 OC -65 OC to +200 OC -65 C to +150 C 20 OC/W O O A B C D E |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • • • Omnigold™ Metalization System ØD E F MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 0.4 A 55 V 30 V 3.5 V 5.0 W @ TC = 25 C -65 OC to +200 OC -65 OC to +200 OC 35.0 OC/W O DIM A B C D E F G H G H MINIMUM inches / mm MAXIMUM inches |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • • • Omnigold™ Metalization System B E .725/18,42 F K M L MAXIMUM inches / mm MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC O G 1.0 A DIM H MINIMUM inches / mm J I 65 V 35 V 65 V 4.0 V 13 W @ TC = 25 OC -65 C to +200 C -65 C to |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • • • Omnigold™ Metalization System B D C J E F I MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θ JC 10 A 60 V 35 V 140 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +150 OC 11 OC/W DIM A B C D E F G H I J K .175 / 4.45 .275 / 6.99 .245 / 6.22 MINIMUM |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • • • Omnigold™ Metalization System B D C J E F I MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θ JC O G H K DIM A B C D E F G H I J K .175 / 4.45 .275 / 6.99 .245 / 6.22 .640 / 16.26 .217 / 5.51 .285 / 7.24 MINIMUM inches / mm #8-32 UNC MAXIMUM |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • Internal Input Matching Network • PG = 8.5 dB at 70 W/400 MHz • Omnigold™ Metalization System MAXIMUM RATINGS IC 8.0 A VCBO 60 V VCEO 30 V VCES 60 V VEBO 4.0 V PDISS 140 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C |
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Desde 2024. D4U Semiconductor.
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