| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 7.0 dB min. at 25 W/400 MHz • η D = 60 % Typical • Omnigold™ Metalization System S G C D F E D S Ø.125 NOM. FULL R J .125 I GH MAXIMUM RATINGS ID VDDS VGS PDISS TJ TSTG θ JC O 5.0 A 65 V ±40 V 100 W @ TC = 25 OC -65 C to +200 C -65 C to |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR www.DataSheet4U.com • • • Omnigold™ Metalization System D ØC H I J #8-32 UNC-2A G F E MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θ JC 10 A 60 V 35 V 140 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +150 OC 1.5 OC/W DIM A B C D E F G H I J MINIMUM |
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Desde 2024. D4U Semiconductor.
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