Advanced Semiconductor MV1 Hoja de datos

No.	parte #	Fabricante	Descripción
1	MV1404	Advanced Semiconductor	TUNING VARACTOR • High Capacitance: 90 – 144pF • High Q: 200 Min. Millimeters Dim: A B D F K Min 5.84 2.16 0.46 --25.40 Max 7.62 2.72 0.56 1.27 38.10 Inches Min 0.230 0.085 0.018 --1.000 Max 0.300 0.107 0.022 0.050 1.500 MAXIMUM RATINGS I V PDISS TJ TSTG 12 V 250
2	MV1403	Advanced Semiconductor	TUNING VARACTOR • High Capacitance: 140 – 210pF • High Q: 200 Min. Millimeters Dim: A B D F K Min 5.84 2.16 0.46 --25.40 Max 7.62 2.72 0.56 1.27 38.10 Inches Min 0.230 0.085 0.018 --1.000 Max 0.300 0.107 0.022 0.050 1.500 MAXIMUM RATINGS I V PDISS TJ TSTG 12 V 250
3	MV1401	Advanced Semiconductor	SILICON HYPERABRUPT VARACTOR DIODE INCLUDE: • 14:1 Minimum Tuning Range • High Q - 400 Typical • Economical DO-7 Package PACKAGE STYLE D0-7 MAXIMUM RATINGS IF VR PDISS TJ TSTG O O 250 mA 12 V 400 mW @ TC = 25 C -65 C to +200 C -65 C to +200 C O O O NONE CHARACTERISTICS SYMBOL VBR
4	MV1405	Advanced Semiconductor	Silicon Hyper-Abrupt Junction Microwave Tuning Varactor Diode
5	MV1863D	Advanced Semiconductor	SILICON ABRUPT TUNING VARACTOR DIODE
6	MV1807J1	Advanced Semiconductor	SILICON VARACTOR DIODE