| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 18 dB min. at 75 W/30 MHz • IMD3 = -30 dBc max. at 75 W (PEP) • Omnigold™ Metalization System DIM F 3 G H I MINIMUM inches / mm MAXIMUM inches / mm MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θJC 10 A 60 V 35 V 140 W @ TC = 25 °C -65 °C to |
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Desde 2024. D4U Semiconductor.
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