| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 9.5 dB min. at 2 W / 2300 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System L G H J F I K M NP DIM A MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR G H J F I K M NP • PG = 7 dB min. at 0.5 W / 3,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System DIM A L MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 7 dB min. at 1.0 W / 3,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System DIM A L G H J F I K P MN MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 10 dB min. at 1.0 W/ 2,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System DIM A L G H J F I K P MN MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 10 dB min. at 3 W/ 2,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System L G H J F I K P MN DIM A MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 10 dB min. at 5W/ 2,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System DIM G L H J F I K M NP MINIMUM inches / mm MAXIMUM inches / mm MAXIMUM RATINGS IC VCC PDISS TJ TSTG θ JC O A B C D E F G H .028 / 0.71 .740 / 18.80 |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 9.5 dB min. at 4 W / 2300 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System DIM A L G H J F I K P MN MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 9.5 dB min. at 7 W / 2300 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System DIM A L G H J F I K M NP MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 5 dB min. at 3 W / 3,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System DIM A L G H J F I K P MN MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 5 dB min. at 0.5 W / 4,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System DIM A L G H J F I K M NP MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 5 dB min. at 3 W / 4,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System DIM A L G H J F I K P MN MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 4.5 dB min. at 5 W / 3,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System DIM A L G H J F I K M NP MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 5 dB min. at 10 W/ 2,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System L G H J F I K M NP DIM A B MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • Input Matching Network • • Omnigold™ Metalization System M H I J K L R N DIM A MINIMUM inches / mm P MAXIMUM inches / mm .095 / 2.41 .100 / 2.54 .050 / 1.27 .286 / 7.26 .110 / 2.79 .306 / 7.77 .148 / 3.76 .400 / 10.16 .119 / 3.02 .552 / 14.02 |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • Input Matching Network • • Omnigold™ Metalization System DIM H L G I J K P M MINIMUM inches / mm N MAXIMUM inches / mm MAXIMUM RATINGS IC VCC PDISS TJ TSTG θ JC O A B C .020 / 0.51 .100 / 2.54 .376 / 9.55 .110 / 2.79 .395 / 10.03 .193 / 4.90 |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • Input Matching Network • • Omnigold™ Metalization System M H I J K L R N DIM A MINIMUM inches / mm P MAXIMUM inches / mm .095 / 2.41 .100 / 2.54 .050 / 1.27 .286 / 7.26 .110 / 2.79 .306 / 7.77 .148 / 3.76 .400 / 10.16 .119 / 3.02 .552 / 14.02 |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 5 dB min. at 1.0 W / 4,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System DIM A L G H J F I K P MN MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 |
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Advanced Semiconductor |
(ASI-DDC4563-24 / ASI-MA40232-119) SILICON DETECTOR DIODE |
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Advanced Semiconductor |
(ASI-DDC4563-24 / ASI-MA40232-119) SILICON DETECTOR DIODE |
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Desde 2024. D4U Semiconductor.
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