| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • Input Matching Network • • Omnigold™ Metalization System D C L B M F E G MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O H I J K 2.3 A DIM MINIMUM inches / mm MAXIMUM inches / mm 45 V 15 V 3.5 V 29 W @ TC = 25 C -65 C to +200 C -6 |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • • • Omnigold™ Metalization System D C L B M F E G H J I MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O K 3.0 A 45 V 15 V 3.0 V 37.2 W -65 OC to +200 OC -65 C to +150 C 4.7 OC/W O DIM A B C D E F G H I J K L M MINIMUM inches / mm |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • • • Omnigold™ Metalization System D C L B M F E G H MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 3.0 A 45 V 15 V 3.0 V 37.2 W @ TC = 25 C -65 OC to +200 OC -65 OC to +150 OC 4.0 OC/W O DIM A B C D E F G H I J K L M .245 / 6.22 .092 / |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • • • Omnigold™ Metalization System D C L B M F E G H J I MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 2.6 A 45 V 12 V 3.0 V 50 W @ TC = 25 OC -65 OC to +200 OC -65 C to +150 C 3.5 OC/W O O DIM A B C D E F G H I J K L M .245 / 6.22 .0 |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • • • Omnigold™ Metalization System M F E G H I J K MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θ JC O DIM A B C D E F G H I J K L MINIMUM inches / mm MAXIMUM inches / mm 10 A 60 V 35 V 140 W @ TC = 25 OC -65 C to +200 C -65 OC to +150 OC 3.5 |
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Desde 2024. D4U Semiconductor.
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