| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Advanced Power Technology |
RF & Microwave Transistors • • • • • • 960 MHz 24 VOLTS POUT = 30 WATTS GP = 7.0 dB MINIMUM IMPUT MATCHING COMMON BASE CONFIGURATION DESCRIPTION: The SD1495-03 is a silicon NPN transistor designed for 900 960 MHz base station applications. Gold metalization and internal impe |
|
|
|
|
Advanced Power Technology |
RF & Microwave Transistors • • • • • • 960 MHz 24 VOLTS POUT = 55 WATTS GP = 7.4 dB MINIMUM INPUT MATCHED COMMON BASE CONFIGURATION DESCRIPTION: The SD1496-03 is a 24V Class C epitaxial silicon NPN planar transistor designed primarily for amplifier applications in the 900 – |
|
|
|
|
Advanced Power Technology |
RF & Microwave Transistors • • • • • • • 900 MHz 24 VOLTS POUT = 60 WATTS 50% EFFICIENCY GP = 7.5 dB MINIMUM INPUT MATCHED COMMON BASE CONFIGURATION DESCRIPTION: The SD1496 is a silicon NPN transistor designed for 860 –900 MHz base station applications. Gold metallization and |
|
|
|
|
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS • • • • • • • 860 – 960 MHz 24 VOLTS COMMON EMITTER GOLD METALLIZATION CLASS A LINEAR OPERATION POUT = 0.9 W MIN. 9.5 dB GAIN DESCRIPTION: The SD1420-01 is a gold metallized epitaxial silicon NPN planar transistor designed for high-linearity Class A |
|
|
|
|
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS • • • • • 470 MHz 12.5 VOLTS POUT = 25.0 WATTS GP = 6.2 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1429-03 is an epitaxial silicon NPN planar transistor designed for broadband applications in the 450-512MHz land Mobile radio band. Th |
|
|
|
|
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS • • • • • 470 MHz 12.5 VOLTS POUT = 15.0 WATTS GP = 7.5 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The SD1429-03 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for UHF communications. It withstands infinite VSWR at r |
|
|
|
|
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS The SD1429 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes “Tuned Q” technology which consists of an input matching network on the base to achieve optimum gain and broadband |
|
|
|
|
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS www.DataSheet4U.com • 28 VOLTS • 175 MHz CLASS C COMMON EMITTER EFFICIENCY 60% MIN. POUT = 40 W MIN. GP = 7.6 dB GAIN • • • • • DESCRIPTION: The SD1224 is an epitaxial silicon NPN planar transistor designed primarily for 28 V FM Class C RF amplif |
|
|
|
|
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS 470 MHz 12.5 VOLTS POUT = 4.0 WATTS GP = 12.0 dB MINIMUM COMMON EMITTER 1. Emitter 2. Base 3. Collector DESCRIPTION: The SD1444 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device is packaged in |
|
|
|
|
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS • 175 MHz • 12.5 Volts • Common Emitter • POUT = 10 W Min. • GP = 10 dB Gain DESCRIPTION: The SD1143 is a 12.2 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF Communications. It withstands very high VSWR under operating c |
|
|
|
|
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS • 175 MHz • 12.5 VOLTS • POUT = 10 W • GP = 10 dB MINIMUM • COMMON EMITTER CONFIGURATION DESCRIPTION: The SD1143-01 is a 12.5 V epitaxial silicon, NPN transistor designed primarily for Class C, VHF communications equipment. Emitter ballast resistors |
|
Desde 2024. D4U Semiconductor.
|