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Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • Specified @ 12.5 V, 175 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 11.5 dB • Efficiency 60% (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Improved Solderability Power Macro DESCRIPTION: Designed pri |
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Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • Specified @ 12.5 V, 870 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 8 dB • Efficiency 60% (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Improved Solderability MRF557 MRF557G * G Denotes RoHS Compliant |
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Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • Low Cost SO-8 Plastic Surface Mount Package. www.DataSheet4U.com • • • S-Parameter Characterization Tape and Reel Packaging Options Available Maximum Available Gain = 17 dB @ 300 MHz SO-8 R1 suffix –Tape and Reel, 500 units R2 suffix –Tape and Reel, |
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Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • Specified @ 12.5 V, 870 MHz Characteristics • Output Power = .5 W • Minimum Gain = 8.0 dB • Efficiency 50% • Cost Effective Macro X Package • Electroless Tin Plated Leads for Improved Solderability Macro X DESCRIPTION: Designed primarily for wide |
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Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • Specified @ 12.5 V, 870 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 8 dB • Efficiency 60% (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Improved Solderability MRF557 MRF557G * G Denotes RoHS Compliant |
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Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Maximum Available Gain = 17dB @ 300MHz SO-8 R1 suffix –Tape and Reel, 500 units R2 suffix –Tape and Reel, 2500 units DESCRIPT |
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Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Maximum Available Gain = 17dB @ 300MHz SO-8 R1 suffix –Tape and Reel, 500 units R2 suffix –Tape and Reel, 2500 units DESCRIPT |
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Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • Low Cost SO-8 Plastic Surface Mount Package. www.DataSheet4U.com • • • S-Parameter Characterization Tape and Reel Packaging Options Available Maximum Available Gain = 17 dB @ 300 MHz SO-8 R1 suffix –Tape and Reel, 500 units R2 suffix –Tape and Reel, |
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Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • Low Cost SO-8 Plastic Surface Mount Package. www.DataSheet4U.com • • • S-Parameter Characterization Tape and Reel Packaging Options Available Maximum Available Gain = 17 dB @ 300 MHz SO-8 R1 suffix –Tape and Reel, 500 units R2 suffix –Tape and Reel, |
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Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • Low Cost SO-8 Plastic Surface Mount Package. www.DataSheet4U.com • • • S-Parameter Characterization Tape and Reel Packaging Options Available Maximum Available Gain = 17 dB @ 300 MHz SO-8 R1 suffix –Tape and Reel, 500 units R2 suffix –Tape and Reel, |
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Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • Low Cost SO-8 Plastic Surface Mount Package. www.DataSheet4U.com • • • S-Parameter Characterization Tape and Reel Packaging Options Available Maximum Available Gain = 17 dB @ 300 MHz SO-8 R1 suffix –Tape and Reel, 500 units R2 suffix –Tape and Reel, |
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Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • Silicon NPN, high Frequency, To-72 packaged, Transistor • High Power Gain - GU(max): 11 dB (typ) @ f = 450 MHz 7 dB (typ) @ f = 1 GHz • Low Noise Figure NF = 1.5 dB (typ) @ f = 450 MHz • High FT - 4 GHz (typ) @ IC = 15 mAdc 2 13 4 1. Emitter 2. B |
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Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • 12.5V Silicon NPN, TO-39 packaged VHF & UHF Transistor • 1.75 Watt Minimum Power Output @ 12.5V, 175 MHz • 11.5 minimum Gain @ 12.5V, 175 MHz • 50% Efficiency @ 12.5V, 175 MHz 12 3 1. EMITTER 2. BASE 3. COLLECTOR TO-39 (common collector) DESCRI |
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Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • Specified @ 12.5 V, 175 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 11.5 dB • Efficiency 60% (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Improved Solderability Power Macro DESCRIPTION: Designed pri |
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Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • Silicon NPN, To-39 packaged VHF/UHF Transistor • Gpe = 10 dB (typ) @ 60 mA, 300 MHz • 3 GHz Current-Gain Bandwidth Product @ 60mA • Broadband Noise Figure = 7.5 dB @ 50mA, 300 MHz 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: The MRF517 is |
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Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • Maximum Available Gain = 17dB @ 300MHz • High fT – 1.2 GHz typical 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Designed for general-purpose RF amplifier applications, such as pre-drivers, drivers, and oscillators. ABSOLUTE MAXIMUM RATINGS |
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Advanced Power Technology |
Bipolar Junction Transistor • • • • Low Noise - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective SO-8 package SO-8 R1 suffix –Tape and Reel, 500 units R2 suffix –Tape and Reel, 2500 units DESCRIPTION: Designed for high current, low |
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Advanced Power Technology |
Bipolar Junction Transistor • • • • Low Noise - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective SO-8 package SO-8 R1 suffix –Tape and Reel, 500 units R2 suffix –Tape and Reel, 2500 units DESCRIPTION: Designed for high current, low |
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Advanced Power Technology |
RF and Microwave Discrete Low Power Power Transistors • • • • Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective MacroX Package Macro X DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE |
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Advanced Power Technology |
RF and Microwave Discrete Low Power Power Transistors • • • • Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective MacroX Package Macro X DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE |
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Desde 2024. D4U Semiconductor.
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