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Advanced Power Technology |
Phase leg NPT IGBT Power Module · Non Punch Through (NPT) THUNDERBOLT IGBT® www.DataSheet4U.com · · · G1 E1 VBUS 0/VBUS OUT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche |
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Advanced Power Technology |
Dual Buck chopper NPT IGBT Power Module • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated - Symmetrical design • |
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Advanced Power Technology |
Single diode Power Module • • • • • • Ultra fast recovery times Soft recovery characteristics Very low stray inductance High blocking voltage High current Low leakage current www.DataSheet4U.com A1 A S P M™ A2 A S P M™ Benefits K1 K2 • • • • Low losses Low noise switc |
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Advanced Power Technology |
Triple dual Common Source Super Junction MOSFET Power Module • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration D2 |
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Advanced Power Technology |
Fast Diode Rectifier Bridge Power Module • • • • • • • • www.DataSheet4U.com - Ultra fast recovery times Soft recovery characteristics Very low stray inductance High blocking voltage High current Low leakage current Very low stray inductance - Symmetrical design - Lead frames for power co |
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Advanced Power Technology |
Triple phase leg Super Junction MOSFET Power Module • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration G2 |
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Advanced Power Technology |
IGBT Power Module • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for |
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Advanced Power Technology |
IGBT Power Module • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitte |
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Advanced Power Technology |
Input rectifier bridge Brake 3 Phase Bridge NPT IGBT Power Module • Non Punch Through (NPT) Low Loss IGBT® - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Very low stray ind |
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Advanced Power Technology |
Power MOSFET |
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Advanced Power Technology |
Fast Diode Rectifier Bridge Power Module • • • • • • • • AC2 + - - www.DataSheet4U.com Ultra fast recovery times Soft recovery characteristics Very low stray inductance High blocking voltage High current Low leakage current Very low stray inductance - Symmetrical design - M5 power connec |
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Advanced Power Technology |
3 Phase bridge NPT IGBT Power Module • Non Punch Through (NPT) IGBT® - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy dri |
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Advanced Power Technology |
Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module · G1 OUT S1 Q2 · Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated G2 0/VBU S S2 NTC1 Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - P |
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Advanced Power Technology |
(APT9021DFN / APT10021DFN) N-Channel Enhancement Mode High Voltage Power MOSFET |
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Advanced Power Technology |
(APT8DQ60x) ULTRAFAST SOFT RECOVERY RECTIFIER DIODE • Ultrafast Recovery Times • Soft Recovery Characteristics PRODUCT BENEFITS • Low Losses • Low Noise Switching TO-220 D2PAK 1 2 (SA) 1 • Cooler Operation • Popular TO-220 Package or Surface Mount D2 PAK Package • Higher Reliability Systems • |
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Advanced Power Technology |
Buck chopper NPT IGBT Power Module · Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated · Kelvin emitter for ea |
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Advanced Power Technology |
Power-Module IGBT • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for |
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Advanced Power Technology |
Power MOSFET e Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy L A C I N H C N E T IO E T C MA N A OR V AD INF 30 120 ±30 ±40 890 7.12 300 30 50 (Repetitive and Non-Repetitive) |
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Advanced Power Technology |
Power MOSFET Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-S |
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Advanced Power Technology |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy L A C I N H C N E T O I E T C MA N A OR V AD |
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Desde 2024. D4U Semiconductor.
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