| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Advanced Power Technology |
RF Transistor ad Mismatch - Stability Note 1: Pulse condition of 150µsec, 5%. Freq = 890 – 1000 MHz Vcc = 48 Volts Pin = 23 Watts Pulse Width = 150µs Duty Factor = 5% Bvces Ices Iebo θjc1 Collector to Emitter Breakdown Collector to Emitter Leakage Emitter to B |
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Advanced Power Technology |
RF Transistor Stability Note 1: Pulse condition of 150µsec, 5%. Freq = 890 – 1000 MHz Vcc = 40 Volts Pin = 9.5 Watts Pulse Width = 150µs Duty Factor = 5% Bvces Ices Iebo θjc1 Collector to Emitter Breakdown Collector to Emitter Leakage Emitter to Base Leakage |
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Advanced Power Technology |
RF Transistor turn loss Load Mismatch Tolerance Droop Load Mismatch - Stability Note 1: Pulse condition of 150µsec, 10%. Freq = 890 – 1000 MHz Vcc = 50 Volts Pin = 33 Watts Pulse Width = 150µs Duty Factor = 5% Bvces Ices θjc1 Collector to Emitter Breakdown Col |
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Desde 2024. D4U Semiconductor.
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