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Advanced Power Electronics |
AP62T03GH 30 +20 54 38 120 47 0.31 20 20 -55 to 175 -55 to 175 Units V V A A A W W/℃ mJ A ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount)4 Rthj-a Maxim |
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Advanced Power Electronics |
AP60N03S Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.0 62 Unit ℃/W ℃/W Data & specification |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 0 -55 to 150 W W/°C °C °C Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 50 Unit °C/W Ordering Information AP6680BGM-HF-3TR : in RoHS-compliant halogen-free SO-8, shipped on tape and reel (3000 pcs/reel) © |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET hj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 4 65 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200812302 Free Datasheet http://www.datasheet4u.com/ AP6679GI |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET le Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 240 9 7 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Therma |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET A 18 A dv/dt MOSFET dv/dt Ruggedness (VDS = 0 …400V ) 50 V/ns PD@TC=25℃ PD@TA=25℃ EAS dv/dt Total Power Dissipation Total Power Dissipation4 Single Pulse Avalanche Energy5 Peak Diode Recovery dv/dt6 56.8 W 2W 36.7 mJ 15 V/ns TSTG Storage Te |
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Advanced Power Electronics |
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power Electronics |
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 Thermal Data Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET rameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.4 110 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200811053 www.DataSheet4U.com AP6679GH/J Electrical Characterist |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance Junction-case Maximum Thermal Resistance, Junction-ambi |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET esistance, Junction-case Maximum Thermal Resistance, Junction-ambient 3 Value 5 35 Unit ℃/W ℃/W 1 201103291 Data and specifications subject to change without notice Free Datasheet http://www.datasheet4u.com/ AP6680BGYT-HF Electrical Characteristic |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Drain Current Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient 3 Value 5 40 Un |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET wer Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient 3 Value 1.5 25 |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET r Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.4 62 Unit ℃/W ℃/W Data and specifications subject to |
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Advanced Power Electronics |
AP60N03GP A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET rating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 50 Unit °C/W Ordering Information AP6679GM-HF-3TR : in RoHS-compliant halogen-free SO-8, shipped on tape and reel (3000 pcs/re |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 1 Total Power Dissipation 30 V +20 V 12 A 9.8 A 60 A 2.5 W Linear Derating Factor 0.02 W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Therma |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Drain Current, VGS @ 10V3,4 Drain Current, VGS @ 10V3,4 Pulsed Drain Current1 MOSFET dv/dt Ruggedness (VDS = 0 …400V ) Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy5 Peak Diode Recovery dv/dt6 600 +20 13.5 8.5 39 50 3 |
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Desde 2024. D4U Semiconductor.
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