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Advanced Power Electronics 83T DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
83T03GH-HF

Advanced Power Electronics
AP83T03GH-HF
Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (
Datasheet
2
83T02GH-HF

Advanced Power Electronics
AP83T02GH-HF
Dissipation3 Storage Temperature Range Operating Junction Temperature Range Rating 25 +20 75 53 240 60 2.4 -55 to 175 -55 to 175 Units V V A A A W W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Max
Datasheet
3
AP83T03AGMT-HF

Advanced Power Electronics
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
V Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy4 Storage Temperature Range Operating Junction Temperature Range 30 +20 71 23.2 18.6 200 50 5 45
Datasheet
4
AP83T03GH-HF-3

Advanced Power Electronics
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A A A W W/ °C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistan
Datasheet
5
AP83T03GJ-HF-3

Advanced Power Electronics
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A A A W W/ °C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistan
Datasheet
6
AP83T03GH-HF

Advanced Power Electronics
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (
Datasheet
7
AP83T03GJ-HF

Advanced Power Electronics
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (
Datasheet
8
AP83T02GH-HF

Advanced Power Electronics
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A A W W ℃ ℃ Total Power Dissipation Total Power Dissipation 3 2.4 -55 to 175 -55 to 175 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Ma
Datasheet
9
AP83T02GJ-HF

Advanced Power Electronics
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A A W W ℃ ℃ Total Power Dissipation Total Power Dissipation 3 2.4 -55 to 175 -55 to 175 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Ma
Datasheet
10
AP83T03GMT-HF

Advanced Power Electronics
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
tion Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient 3 Value 2.5 25 Units ℃/W
Datasheet
11
AP83T03AGH-HF

Advanced Power Electronics
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
ipation3 Storage Temperature Range Operating Junction Temperature Range BVDSS RDS(ON) ID 30V 6.5mΩ 66A G D S TO-252(H) Rating 30 +20 66 42 160 50 2 -55 to 150 -55 to 150 Units V V A A A W W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a M
Datasheet
12
AP83T03GJB

Advanced Power Electronics
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Junction Temperature Range 30 +20 75 53 240 60 -55 to 175 -55 to 175 V V A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications s
Datasheet
13
AP83T03GM-HF

Advanced Power Electronics
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
ed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range +20 16 12.7 60 2.5 -55 to 150 -55 to 150 V A A A W ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 D
Datasheet



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