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AXElite |
P-Channel Enhancement Mode MOSFET ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free ABSOLUTE MAXIMUM RATINGS BVDSS RDS(ON) ID -40V 90mΩ -14A VÛmw`R •yÑb€ Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, w.go |
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AXElite |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET 4 -40 2.5 0.02 -55 to 150 -55 to 150 Max. Value 50 -40V 90mΩ -4.2A G SS S D S Units V V A A A W W/℃ ℃ ℃ Unit ℃/W 1/5 Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.0 May. 25, 2011 GOFO TEL 0755-8398 3377 |
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Axelite |
-30V P-Channel Enhancement Mode MOSFET -30V/-5.2A, RDS(ON) ＜ 60mΩ@VGS = -10V -30V/-4.5A, RDS(ON) ＜90mΩ@VGS = -6.0V -30V/-4.0A, RDS(ON) ＜120mΩ@VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Full |
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Axelite |
-30V P-Channel Enhancement Mode MOSFET -30V/-5.2A, RDS(ON) ＜ 60mΩ@VGS = -10V -30V/-4.5A, RDS(ON) ＜90mΩ@VGS = -6.0V -30V/-4.0A, RDS(ON) ＜120mΩ@VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Full |
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Desde 2024. D4U Semiconductor.
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