| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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AXElite |
N-Channel Enhancement Mode MOSFET • 20V/3A, RDS(ON)= 50mΩ(Typ.) @ VGS= 4.5V RDS(ON)= 65mΩ(Typ.) @ VGS= 2.5V RDS(ON)= 120mΩ(Typ.) @ VGS= 1.8V Pin Description Top View D • • • Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G |
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AXElite |
P-Channel Enhancement Mode MOSFET z Pin Description Top View D -20V/-2.5A, RDS(ON)= 85mΩ (typ.) @ VGS= -4.5V RDS(ON)= 110mΩ (typ.) @ VGS= -2.5V z z Super High Dense Cell Design Reliable and Rugged G S SOT-23 S Applications z Power Management in Notebook Computer, € Portable |
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Axelite |
P-Channel Enhancement Mode MOSFET • -20V/-4A, RDS(ON)=40mΩ (typ.) @ VGS=-4.5V RDS(ON)=55mΩ (typ.) @ VGS=-2.5V Pin Description Top View D • • • Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G S SOT-23 S Applications • Pow |
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AXElite |
P-Channel Enhancement Mode MOSFET • -30V/-3A , RDS(ON)=100mΩ(typ.) @ VGS=-10V RDS(ON)=140mΩ(typ.) @ VGS=-4.5V Pin Description Top View D • • • Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G S SOT |
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AXElite |
N-Channel Enhancement Mode MOSFET • 20V/6A , RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=45mΩ(typ.) @ VGS=4.5V RDS(ON)=115mΩ(typ.) @ VGS=2.5V Pin Description D • • • Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SOT-23 Package G S Applications • Power Manage |
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Desde 2024. D4U Semiconductor.
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