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Advanced Power MOSFET • • • • High Voltage: BVDSS=200V(Min.) Low Crss : Crss=22pF(Typ.) Low gate charge : Qg=30nC(Typ.) Low RDS(on) :RDS(on)=0.17Ω(Max.) Type NO. STK1820F Marking STK1820 Package Code TO-220F-3L Ordering Information Outline Dimensions unit : mm 9.80~10 |
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Advanced Power MOSFET • High Voltage: BVDSS=650V(Min.) • Low Crss : Crss=13pF(Typ.) • Low gate charge : Qg=32nC(Typ.) • Low RDS(on) :RDS(on)=1.2Ω(Typ.) Ordering Information Type No. Marking STK0765BF STK0765 Package Code TO-220F-3L PIN Connection G GDS TO-220F-3 |
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Advanced Power MOSFET • High Voltage: BVDSS=60V(Min.) • Low Crss : Crss=84pF(Typ.) • Low gate charge : Qg= 26.7nC(Typ.) • Low RDS(on) :RDS(on)=25mΩ(Max.) Ordering Information Type NO. STK5006P STK5006 Marking Package Code TO-220AB-3L Outline Dimensions Φ3.90 Max. 9.80~1 |
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N-Channel Junction FET • Especially suited for use in audio, telephone capacitor microphones • Excellent voltage characteristic • Excellent transient characteristic Ordering Information Type NO. STK596EF Marking J□ □:IDSS Rank Package Code SOT-523F Outline Dimensions un |
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Advanced Power MOSFET • Avalanche rugged technology. • • • • Low input capacitance. Improved gate charge. Low leakage current : 10uA (Max.) @ VDS=500V. Low RDS(ON) : 1.17Ω(Typ.) Ordering Information Type NO. STK830FC Marking STK830 Package Code TO-220F-3SL Outline Dimen |
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Power MOSFET • Low Crss • Low gate charge. • Low leakage current Ordering Information Type NO. STK0765F Marking STK0765 Package Code TO-220F-3L Outline Dimensions unit : mm PIN Connections 1. Gate 2. Drain 3. Source www.DataSheet4U.com KST-H038-003 1 www. |
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Advanced Power MOSFET • High Voltage: BVDSS=600V(Min.) • Low Crss : Crss=12pF(Typ.) • Low gate charge : Qg=28nC(Typ.) • Low RDS(on) :RDS(on)=1.2Ω(Max.) www.DataSheet4U.com Ordering Information Type NO. STK0760F Marking STK0760 Package Code TO-220F-3L Outline Dimensions |
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Advanced Power MOSFET • • • • High Voltage: BVDSS=500V(Min.) Low Crss : Crss=8.4pF(Typ.) Low gate charge : Qg=17nC(Typ.) Low RDS(on) :RDS(on)=1.5Ω(Max.) Ordering Information Type NO. STK830P Marking STK830 Package Code TO-220AB-3L Outline Dimensions Φ3.90 Max. 9.80~10.2 |
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Advanced N-Ch Power MOSFET Drain-source breakdown voltage: BVDSS=800V (Min.) Low gate charge: Qg=14.2nC (Typ.) Low drain-source On resistance: RDS(on)=3.5Ω (Typ.) RoHS compliant device 100% avalanche tested Ordering Information Part Number Marking Package STK038 |
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Advanced N-Ch Trench MOSFET Low Voltage : BVDSS=30V(Min.) Low VGS(th) : VGS(th)=0.6~1.2V Small footprint due to small package Low RDS(on) : RDS(on)=40mΩ(Max.) Ordering Information Type No. Marking STK003SF K03 □ ①② Package Code SOT-23F PIN Connection G S D G SO |
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N-Channel Enhancement-Mode MOSFET • High density cell design for low RDS(ON). • Voltage controlled small signal switch • Include Zener protection for ESD ruggedness. Ordering Information Type NO. STK0602 Marking K602 Outline Dimensions 2.4±0.1 1.30±0.1 1 3 2 STK0602 N-Channel E |
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Advanced Power MOSFET • • • • High Voltage : BVDSS=400V(Min.) Low Crss : Crss=4.9pF(Typ.) Low gate charge : Qg=4.6nC(Typ.) Low RDS(on) : RDS(on)=4.1Ω(Max.) Type NO. STK0240D Marking STK0240 Package Code D-PAK Ordering Information Outline Dimensions unit : mm 6.50~6.70 |
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Advanced Power MOSFET • • • • High Voltage : BVDSS=500V(Min.) Low Crss : Crss=6.5pF(Typ.) Low gate charge : Qg=8.5nC(Typ.) Low RDS(on) : RDS(on)=3.3Ω(Max.) Type NO. STK0250D Marking STK0250 Package Code D-PAK Ordering Information Outline Dimensions unit : mm 6.50~6.70 |
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Advanced Power MOSFET • • • • High Voltage: BVDSS=600V(Min.) Low Crss : Crss=6.0pF(Typ.) Low gate charge : Qg=8.4nC(Typ.) Low RDS(on) :RDS(on)=4.7Ω(Max.) Type NO. STK0260 Marking STK0260 Package Code MPT Ordering Information Outline Dimensions 7.30~7.50 unit : mm Data |
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Advanced Power MOSFET • • • • High Voltage: BVDSS=600V(Min.) Low Crss : Crss=6.0pF(Typ.) Low gate charge : Qg=8.4nC(Typ.) Low RDS(on) :RDS(on)=4.0Ω(Max.) Type NO. STK0260F Marking STK0260 Package Code TO-220F-3L Ordering Information Outline Dimensions unit : mm 9.80~1 |
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Advanced Power MOSFET • • • • High Voltage: BVDSS=600V(Min.) Low Crss : Crss=4.3pF(Typ.) Low gate charge : Qg=4.5nC(Typ.) Low RDS(on) :RDS(on)=9.4Ω(Max.) Type NO. STK0160D Marking STK0160 Package Code D-PAK Ordering Information Outline Dimensions unit : mm 6.50~6.70 5 |
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N-Channel Enhancement-Mode MOSFET Ordering Information Type NO. STK7000 Marking STK7000 Package Code TO-92 Outline Dimensions 3.45±0.1 4.5±0.1 4.5±0.1 2.25±0.1 unit : mm 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ. 1 2 3 PIN Connections 1. Source 2. Gate 3. Drain 0.38 1.20±0.1 KST- |
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N-Channel Enhancement-Mode MOSFET • High Voltage: BVDSS=60V(Min.) • Low Crss : Crss=3.1pF(Typ.) • Low gate charge : Qg=2.8nC(Typ.) • Low RDS(on) :RDS(on)=2.8Ω(Typ.) www.DataSheet4U.com Ordering Information Type NO. STK7002B Marking 72B Package Code SOT-23 Outline Dimensions unit : |
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N-Channel Enhancement-Mode MOSFET • High density cell design for low RDS(ON). • Voltage controlled small signal switch www.DataSheet4U.com • High saturation current capability. Ordering Information Type NO. STK7002U Marking K72 Package Code SOT-323 Outline Dimensions 2.0~2.2 1.2~1. |
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Advanced Power MOSFET Semiconductor • High Voltage: BVDSS=60V(Min.) • Low Crss : Crss=84pF(Typ.) • Low gate charge : Qg=26.7nC(Typ.) • Low RDS(on) :RDS(on)=16mΩ(Max.) Ordering Information Type NO. STK7006P Marking STK7006 Outline Dimensions 9.80~10.20 STK7006P Advanced Power MOSFE |
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Desde 2024. D4U Semiconductor.
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