| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ATMEL Corporation |
One-channel Touch Sensor • Number of Keys: – One – Configurable as either a single key or a proximity sensor • Technology: – Patented spread-spectrum charge-transfer (direct mode) • Key outline sizes: – 6 mm x 6 mm or larger (panel thickness dependent); widely different size |
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ATMEL Corporation |
AT49F1024 • Single Voltage Operation • • • • • • • • • – 5V Read – 5V Reprogramming Fast Read Access Time - 45 ns Internal Program Control and Timer 8K word Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Word By Word Programming - 10 µs/Word Typica |
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ATMEL Corporation |
QTouch 8-key Touch Sensor • QTouch® Sensor Channels – Up to 8 keys • Integrated Haptic Engine – Haptic events may be triggered by touch detection or controlled by a host microcontroller over SPI Data Acquisition – QTouchADC key measurement/touch detection method – Configurab |
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ATMEL Corporation |
4-Megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory • Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time - 120 ns • Internal Program Control and Timer • 16K bytes Boot Block With Lockout • Fast Chip Erase Cycle Time - 10 seconds • Byte-by-Byte Programming - |
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ATMEL Corporation |
Missed Watchdog Timer Reset • • • • • • • • • • • • • • • • AVR® 8-bit RISC Microcontroller with 83 ns Instruction Cycle Time USB Hub with One Attached and Four External Ports USB Keyboard Function with Four Programmable Endpoints 16 KB Program Memory, 512-Byte Data SRAM 32 x 8 |
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ATMEL Corporation |
32-megabit 2.7-volt Only DataFlash • Single 2.7V - 3.6V Supply • Serial Peripheral Interface (SPI) Compatible • 20 MHz Max Clock Frequency • Page Program Operation – Single Cycle Reprogram (Erase and Program) – 8192 Pages (528 Bytes/Page) Main Memory • Supports Page and Block Erase Op |
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ATMEL Corporation |
2-Megabit 5-volt Only Flash Memory • Single-voltage Operation – 5V Read – 5V Reprogramming • Fast Read Access Time - 55 ns • Internal Program Control and Timer • Sector Architecture – One 16K Byte Boot Block with Programming Lockout – Two 8K Byte Parameter Blocks – Two Main Memory Blo |
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ATMEL Corporation |
5-volt-only in-system Flash Memory • Single-voltage Operation – 5V Read – 5V Reprogramming • Fast Read Access Time – 55 ns • Internal Program Control and Timer • 16-Kbyte Boot Block with Lockout • Fast Erase Cycle Time – 10 seconds • Byte-by-byte Programming – 50 µs/Byte • Hardware Da |
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ATMEL Corporation |
(AT49xV160 / AT49xV161) Flash Memory • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture • • • – Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Indiv |
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ATMEL Corporation |
(AT49xV160 / AT49xV161) Flash Memory • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture • • • – Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Indiv |
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ATMEL Corporation |
(AT49xV160 / AT49xV161) Flash Memory • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture • • • – Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Indiv |
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ATMEL Corporation |
Flash Memory • 64-megabit (4M x 16) Flash Memory • 2.7V - 3.6V Read/Write • High Performance – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout – One Hundred Twenty-seve |
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ATMEL Corporation |
Full-speed USB Hub/Function Microcontroller • • • • • • • • • • • • • • • • • • • AVR® Microcontroller-based USB Hub and Function Controller One Upstream Port Plus Four External and One Attached Downstream Ports USB Hub with Two Endpoints Embedded USB Function with 3 Endpoints 32 Programmable |
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ATMEL Corporation |
8-megabit 2.5-volt Only or 2.7-volt Only DataFlash • Single 2.5V - 3.6V or 2.7V - 3.6V Supply • Serial Peripheral Interface (SPI) Compatible • Page Program Operation • • • • • • • • • – Single Cycle Reprogram (Erase and Program) – 4096 Pages (264 Bytes/Page) Main Memory Supports Page and Block Erase |
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ATMEL Corporation |
2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer • Sector Architecture – One 16K Bytes Boot Block with Programming Lockout – Two 8K Bytes Parameter Blocks – Tw |
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ATMEL Corporation |
1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory • • • • • • • • • • Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Fast Read Access Time - 55 ns Internal Program Control and Timer 8K bytes Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Byte By Byte Programmi |
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ATMEL Corporation |
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage Flash Memory • • • • Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) Fast Read Access Time – 70 ns Internal Erase/Program Control Sector Architecture – One 8K Word (16K Bytes) Boot Block with Programming Lockout – Two 4K Word (8K Bytes) |
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ATMEL Corporation |
8-megabit and 4-megabit Firmware Hub Flash Memory • Low Pin Count (LPC) BIOS Device • Functions as Firmware Hub for Intel 810, 810E, 820, 840 Chipsets • 8M or 4M Bits of Flash Memory for Platform Code/Data Storage – Uniform, 64-Kbyte Memory Sectors – Available in 8M Bits (AT49LW080) and 4M Bits (AT4 |
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ATMEL Corporation |
Missed Watchdog Timer Reset • • • • • • • • • • • • • • • AVR® 8-bit RISC Microcontroller with 83 ns Instruction Cycle Time USB Hub with One Attached and Two External Ports USB Keyboard Function with Three Programmable Endpoints 16 KB Program Memory, 512 Bytes Data SRAM 32 x 8 |
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ATMEL Corporation |
16-Megabit (1M x 16/2M x 8) 3-volt Only Flash Memory • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture – Thirty 32K Word (64K Byte) Sectors with Individual Write Lockout – Eight 4K Word (8K Byte) Sectors with Individual Write Lockout – Two 16K Word (32K Byte) Sectors with Indi |
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Desde 2024. D4U Semiconductor.
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