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ASI |
NPN RF POWER TRANSISTOR INCLUDE: • High Gain • Gold Metallization • Emitter Ballasting B E D C J E F I MAXIMUM RATINGS IC VCBO PDISS TJ TSTG θJC O O G H K DIM A B C D E F G H I J K .175 / 4.45 .275 / 6.99 .245 / 6.22 .640 / 16.26 .217 / 5.51 .285 / 7.24 MINIMUM inch |
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NPN SILICON RF POWER TRANSISTOR • PG = 10 dB Typical at 400 MHz • Economical .280” Stud Package • Omnigold™ Metalization System MAXIMUM RATINGS IC 2.0 A VCBO 60 V VCEO 33 V VEBO 4.0 V PDISS 30 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 6.0 °C/W P |
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NPN SILICON RF POWER TRANSISTOR • PG = 9.0 dB Min. at 40 W /160 MHz • ηC = 55% Min. at 40 W /160 MHz • Omnigold™ Metalization System E C Ø.125 NOM. FULL R J .125 B C D F E E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 8.0 A 36 V DIM I GH MINIMUM inches / mm MAXIMU |
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ASI |
NPN SILICON RF TRANSISTOR • Low Noise Figure • High Gain • Common Emitter MAXIMUM RATINGS IC 30 mA VCBO 25 V VCEO 15 V VEBO 2.0 V PDISS 0.375 W @ TC = 75 °C TJ -55 °C to +150 °C TSTG -55 °C to +150 °C θJC 200 °C/W PACKAGE STYLE Dim. Are in mm Leads 1 and 3 = E |
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ASI |
NPN SILICON RF TRANSISTOR • Low Noise Figure • Low Intermodulation Distortion • High Gain • Omnigold™ Metalization System MAXIMUM RATINGS IC 200 mA VCBO 36 V VCEO 18 V VEBO 2.5 V PDISS 2.5 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C Leads 1 and 3 |
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NPN SILICON RF TRANSISTOR • PG = 15 dB min. at 1.0 W/ 400 MHz • Common Emitter for Improved Stability • Omnigold™ Metalization System MAXIMUM RATINGS IC 150 mA VCBO 40 V VCEO 30 V VEBO PDISS TJ TSTG θJC 3.0 V 6.1 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +150 OC 28. |
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ASI |
NPN Transistor • Low Noise Figure • High Gain • Omnigold™ Metalization System MAXIMUM RATINGS IC 100 mA VCBO 20 V VCEO 10 V VEBO 1.5 V PDISS 1.0 W @ TC = 25 °C TJ -65 °C to +150 °C TSTG -65 °C to +150 °C θJC 100 °C/W PACKAGE STYLE Dim. Are in mm Lea |
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NPN SILICON HIGH FREQUENCY TRANSISTOR |
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NPN RF POWER TRANSISTOR • Class C Operation • PG = 11 dB at 5.0 W/400 MHz • Omnigold™ Metalization System B E B D C E J E F I MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θJC 1.0 A DIM MINIMUM inches / mm G H K #8-32 UNC MAXIMUM inches / mm 60 V 33 V 12 W @ TC = 25 C -6 |
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ASI |
NPN SILICON RF TRANSISTOR • NF = 1.5 dB (Typ) 450 MHz • Gmax = 16 dB (Typ) 450 MHz • fT = 4.0 GHz (Typ) @ IC = 15 mA MAXIMUM RATINGS IC 30 mA VCBO 25 V VCEO 15 V PDISS 0.2 W @ TA = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C PACKAGE STYLE TO-72 1 = EMITTER |
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ASI |
SILICON NPN RF POWER TRANSISTOR |
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ASI |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
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NPN SILICON RF POWER TRANSISTOR INCLUDE: • High Common Emitter Power Gain • Output Power = 30 W E B C D E C E Ø.125 NOM. FULL R J .125 MAXIMUM RATINGS IC VCE VCB PDISS TJ TSTG θJC 8.0 A 16 V 36 V 100 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.75 °C/W DIM A B C D E F G |
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NPN SILICON RF POWER TRANSISTOR INCLUDE: • High Common Emitter Power Gain • Output Power = 30 W B C EE ØC B H I J MAXIMUM RATINGS IC VCE VCB PDISS TJ TSTG θJC 8.0 A 16 V 36 V 100 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.75 °C/W DIM A B C D E F G H I J D #8-32 UNC- |
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NPN SILICON RF POWER TRANSISTOR • Class B and C Operation • Common Base • PG = 10 dB at 4.0 W/1090 MHz • Omnigold™ Metalization System MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC O O 250 mA 20 V 7.0 W @ TC = 25°C -65 C to +200 °C -65 C to +150 °C 25.0 C/W O 1 = Collector 2 = Emit |
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NPN Silicon RF Microwave Transistor • Low Noise – 2.5 dB @ 500 MHz • Ftau – 5.0 GHz @ 10 V, 75 mA • Cost Effective SO-8 package MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS 200 mA 30 V 15 V 2.5 V 1.25 W @ TC = 25 °C CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE COB FTAU NFmin GN |
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NPN Silicon High Frequency Transistor 500 MHz MINIMUM 17 34 2.5 TYPICAL MAXIMUM UNITS V V V 50 50 4500 2.2 3.0 -65 -120 14.5 200 µA --MHz pF dB dB dBµV dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) |
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NPN SILICON RF TRANSISTOR • Low Noise Figure • High Gain • Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG 70 mA 20 V 10 V 3.0 V 1.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C Leads 1 and 3 = Emitter 2 = Collector 4 = Base CHARACTERIST |
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ASI |
SILICON NPN RF TRANSISTOR 1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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SILICON NPN RF POWER TRANSISTOR |
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Desde 2024. D4U Semiconductor.
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