| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Infineon |
Integrated Class-D Amplifier 2 channel analog input Class D audio amplifier in a small 7x7mm package Very low RDS(ON) at 24.4 mΩ typical, enabling heatsink-less operation at 2x100W at 4Ω 95% efficiency Class D at 2x200W at 4Ω Split or single power supply capable Differ |
|
|
|
|
Sanyo |
Power Amplifier |
|
|
|
|
LIGITEK electronics |
SUPER BRIGHT ROUND TYPE LED LAMPS 10 2000 -40 ~ +85 -40 ~ +100 mA mA mW UNIT μA V ℃ ℃ Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic *glove is recommended when handing these LED. All devices, equipment and machinery must |
|
|
|
|
3PEAK |
Low-Power Op Amps Description • Supply Voltage: 1.75 V to 5.5 V • Offset Voltage: ±1.5 mV Maximum • GPWP: 300 kHz, Slew Rate: 0.15 V/μs • Rail-to-Rail Input and Output • 0.1-Hz to 10-Hz Voltage Noise: 1 μVPP • No Significant Output Glitch when Power on and off • Low |
|
|
|
|
Intersil Corporation |
650ns Precision Sample and Hold Amplifier • Very Fast Acquisition . . . . . . 500ns (0.1%) 650ns (0.01%) • Low Droop Rate . . . . . . . . . . . . . . . . . . . . . . . . 0.01µV/µs • Very Low Offset . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2mV • High Slew Rate. . . . . . . . . |
|
|
|
|
Intersil Corporation |
650ns Precision Sample and Hold Amplifier • Very Fast Acquisition . . . . . . 500ns (0.1%) 650ns (0.01%) • Low Droop Rate . . . . . . . . . . . . . . . . . . . . . . . . 0.01µV/µs • Very Low Offset . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2mV • High Slew Rate. . . . . . . . . |
|
|
|
|
Philipss |
Dual and single low noise op amp NON –INV INPUT A 2 BALANCE A 3 V – 4 BALANCE B 5 NON –INV B 6 INV B 7 • Small-signal bandwidth: 10MHz • Output drive capability: 600Ω, 10VRMS at VS=±18V • Input noise voltage: 4nVń ǸHz • DC voltage gain: 100000 • AC voltage gain: 6000 at 10kHz • Power |
|
|
|
|
Philipss |
Dual and single low noise op amp NON –INV INPUT A 2 BALANCE A 3 V – 4 BALANCE B 5 NON –INV B 6 INV B 7 • Small-signal bandwidth: 10MHz • Output drive capability: 600Ω, 10VRMS at VS=±18V • Input noise voltage: 4nVń ǸHz • DC voltage gain: 100000 • AC voltage gain: 6000 at 10kHz • Power |
|
|
|
|
Hitachi Semiconductor |
3CH VIDEO AMPLIFIER |
|
|
|
|
AMP |
Connectors d for assemblies having 75 contacts or more per row. .020 [0.51] .480 [12.19] .025 Sq. [0.64] .480 [12.19] .025 Sq. [0.64] .210 [5.33] Post Length .197 [5] Post Length .100 [2.54] .462 [11.73] .462 [11.73] ACTION PIN Posts No. of Positions 75 90 |
|
|
|
|
NXP |
InGaP HBT Linear Amplifier and benefits • P1dB: up to 33 dBm • Gain: More than 40 dB • 5 V Supply • Excellent Linearity • High Efficiency • Single−ended Power Detector • Band Tunable NXP Semiconductors 4 Functional block diagram VCC1/ RFout1 RFin2 VCC2 PDET RFin1 BIAS C |
|
|
|
|
Intersil Corporation |
650ns Precision Sample and Hold Amplifier • Very Fast Acquisition . . . . . . 500ns (0.1%) 650ns (0.01%) • Low Droop Rate . . . . . . . . . . . . . . . . . . . . . . . . 0.01µV/µs • Very Low Offset . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2mV • High Slew Rate. . . . . . . . . |
|
|
|
|
Intersil Corporation |
650ns Precision Sample and Hold Amplifier • Very Fast Acquisition . . . . . . 500ns (0.1%) 650ns (0.01%) • Low Droop Rate . . . . . . . . . . . . . . . . . . . . . . . . 0.01µV/µs • Very Low Offset . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2mV • High Slew Rate. . . . . . . . . |
|
|
|
|
UTC |
LOW POWER AMPLIFIER * Low current consumption. * 16Ω load drive capability. * Excellent reduced voltage characteristics. * High power supply ripple rejection. * Fewer external components required. * High voltage gain. * Less harmonic interference in radio band. * Built |
|
|
|
|
RF Micro Devices |
Cascadable PHEMT MMIC Amplifier Broadband Performance Gain = 15.4 dB at 3 GHz P1dB = 16.7 dBm at 3 GHz Low-Noise, Efficient Gain Block 5 V Single Supply Operation Low Gain Variation versus Temperature Applications Broadband Communications Test Instrumentati |
|
|
|
|
TriQuint Semiconductor |
K-Band Power Amplifier Frequency Range: 21.2 – 23.6 GHz Power: 32 dBm Psat, 31 dBm P1dB Gain: 22 dB TOI: 41 dBm at 21 dBm SCL NF: 6 dB Integrated Power Detector Bias: Vd = 6 V, Idq = 880 mA, Vg = -0.7 V Typical Package Dimensions: 4.0 x 4.0 x 0.85 mm QFN 4 |
|
|
|
|
Exar |
Dual Low-Noise Operational Amplifier Direct Replacement for Signetics SEINE 5533 Wide Small-Signal Bandwidth: 10 MHz High-Current Drive Capability (10V rms into 6000 at Vs = ± 18V) High Slew Rate: 13 V/p.s Wide Power-Bandwidth: 200 kHz Very Low Input Noise: 4 nV/.J"HZ APPLICATIONS Hi |
|
|
|
|
Analog Devices |
32-Channel Infinite Sample-and-Hold Infinite Sample-and-Hold Capability to ؎0.018% Accuracy High Integration: 32-Channel SHA in 12 ؋ 12 mm2 LFBGA Per Channel Acquisition Time of 16 s max Adjustable Voltage Output Range Output Voltage Span 10 V Output Impedance 0.5 ⍀ Readback Capability |
|
|
|
|
ST Microelectronics |
7.5NS TRIPLE HIGH VOLTAGE VIDEO AMPLIFIER j j j j j j j TRIPLE CHANNEL VIDEO AMPLIFIER SUPPORTS DC OR AC COUPLING APPLICATIONS BUILT IN VOLTAGE GAIN: 20 RISE AND FALL TIMES: 7.5ns TYPICAL BANDWIDTH: 50MHz TYPICAL SUPPLY VOLTAGE: 110V ADDITIONAL CUT-OFF INPUT CONTROL DESCRIPTION The TDA953 |
|
|
|
|
Mini-Circuits |
Surface Mount Dual MatchedMMIC Amplifiers Two matched amplifiers in one package InGaP HBT IF and RF amplifier frequency range, DC to 4 GHz high gain, 20.5 dB typ. at 100 MHz up to +17.9 dBm typ. output power at 100 MHz high IP3, +35 dBm at 100 MHz CASE STYLE: DL805 PRICE: $ 3.40 ea. QTY (25 |
|
Desde 2024. D4U Semiconductor.
|