No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Intel |
MD332B NAND Flash Memory Preliminary Datasheet Open NAND Flash Interface (ONFI) 2.0 Core Voltage (VCC): 2.7 V - 3.6 V Compliant Multilevel cell (MLC) technology First block (block address 00h) guaranteed to be valid when shipped from factory Organization: |
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Intel |
MD332B NAND Flash Memory Preliminary Datasheet Open NAND Flash Interface (ONFI) 2.0 Core Voltage (VCC): 2.7 V - 3.6 V Compliant Multilevel cell (MLC) technology First block (block address 00h) guaranteed to be valid when shipped from factory Organization: |
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AMD |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory A hardware method of locking a sector to prevent any program or erase operations within that sector Sectors can be locked via programming equipment Temporary Sector Unprotect feature allows code changes in previously locked sectors ■ Top or bottom b |
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AMD |
CMOS 5.0 Volt-only Sector Erase Flash Memory A hardware method of locking a sector to prevent any program or erase operations within that sector Sectors can be locked |
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AMD |
AM29F040B and benefits of the Am29F040, which was manufactured using 0.5 µm process technology. In addtion, the Am29F040B has a second toggle bit, DQ2, and also offers the ability to program in the Erase Suspend mode. The standard Am29F040B offers access times |
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AMD |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The device features single 5.0 V power supply operation for both read and write functions. Internally generated andl regula |
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AMD |
Boot Sector Flash Memory — Hardware method of locking a sector to prevent program or erase operations within that sector — Sectors can be locked in-system or via programming equipment — Temporary Sector Unprotect feature allows code changes in previously locked sectors s To |
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AMD |
CMOS 5.0 Volt-only Sector Erase Flash Memory A hardware method of locking a sector to prevent any program or erase operations within that sector Sectors can be locked |
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AMD |
2 Megabit CMOS 5.0 Volt-only Sector Architecture Flash Memory |
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AMD |
4 Megabit CMOS 5.0 Volt-only Uniform Sector Flash Memory |
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AMD |
4 Megabit CMOS 5.0 Volt-only Sector Erase Flash Memory |
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AMD |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only/ Boot Sector Flash Memory A hardware method of locking a sector to prevent any program or erase operations within that sector Sectors can be locked via programming equipment Temporary Sector Unprotect feature allows code changes in previously locked sectors s Top or bottom b |
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AMD |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only/ Boot Sector Flash Memory A hardware method of locking a sector to prevent any program or erase operations within that sector Sectors can be locked via programming equipment Temporary Sector Unprotect feature allows code changes in previously locked sectors ■ Top or bottom |
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AMD |
Sector Erase Flash Memory a sector erase architecture. This allows for sectors of memory to be erased and reprogrammed without affecting the data contents of other sectors. A sector is typically erased and verified within 1.5 seconds. The Am29F800 is erased when shipped from |
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Intel |
MD332B NAND Flash Memory Preliminary Datasheet Open NAND Flash Interface (ONFI) 2.0 Core Voltage (VCC): 2.7 V - 3.6 V Compliant Multilevel cell (MLC) technology First block (block address 00h) guaranteed to be valid when shipped from factory Organization: |
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AMD |
2 Megabit CMOS 5.0 Volt-only Sector Architecture Flash Memory |
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AMD |
1 Megabit CMOS 5.0 Volt-only Boot Sector Flash Memory that disables/re-enables program and erase operations in any combination of sectors — Sector protection/unprotect |
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AMD |
1 Megabit CMOS 5.0 Volt-only Sector Erase Flash Memory |
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AMD |
1 Megabit CMOS 5.0 Volt-only Sector Erase Flash Memory |
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AMD |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only/ Boot Sector Flash Memory |
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