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WSJM65R120W |
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| Part Number | WSJM65R120W |
| Manufacturer | WeEn |
| Description | WSJM65R120W is a high voltage N-channel MOSFET in TO247 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density. RoHS halogen-Free 2. Features and benefits • Superior FOM RDS(on) * Qg • Ext. |
| Features |
• Superior FOM RDS(on) * Qg • Extremely low switching loss • 100% avalanche tested 3. Applications • high efficiency power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating VDS drain-source voltage VGS gate-source voltage ID continuous drain current Ptot power dissipation Tj junction temperature Symbol Parameter Static characteristics RDS(on) drain-source on-state resistance Dynamic characteristics Conditions Tmb = 25 °C Tmb = 25 °C Conditions VGS = 10 V, ID = 15 A QG(tot) EOSS total gate charge coss stored erergy ID . |
| Datasheet |
 WSJM65R120W Data Sheet
PDF 572.71KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
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Desde 2024. D4U Semiconductor.
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