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| Part Number | WFU4N60 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | WFU4N60 |
| Manufacturer | Winsemi |
| Title | Silicon N-Channel MOSFET |
| Description | This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been Especially designed to minimize on-state resistance, have a high Rugged avalanche characteristics. This devices is specially well Suited for half bridge and full bridge resonant top. |
| Features |
■ 4A,600V.RDS(on)(Max 2.5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage ( VISO = 4000V AC ) ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been Especially designed to minimize on-state resistance,. |
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Desde 2024. D4U Semiconductor.
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