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| Part Number | WFP8N60 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | WFP8N60 |
| Manufacturer | WINSEMI SEMICONDUCTOR |
| Title | Silicon N-Channel MOSFET |
| Description | This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topo. |
| Features |
� � � � � 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteri. |
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Desde 2024. D4U Semiconductor.
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