VS-3C12ET07S2L-M3 650V Gen 3 Power SiC Merged PIN Schottky Diode Datasheet


Part Number VS-3C12ET07S2L-M3
Manufacturer Vishay (https://www.vishay.com/)
Title SiC Schottky Diodes SILICON CARBIDE DIODE - D2-PAK
Description / APPLICATIONS Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness. Optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications suffering from Silicon ultrafast recovery behavio...
• Majority carrier diode using Schottky technology on SiC wide band gap material
• Improved VF and efficiency by thin wafer technology
• Positive VF temperature coefficient for easy paralleling
• Virtually no recovery tail and no switching losses
• Temperature invariant switching behavior
• 175 °C maximum operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
• MPS structure for high ruggedness to forward current surge events
• Meets JESD 201 class 1A whisker test
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ...

Document Datasheet VS-3C12ET07S2L-M3 datasheet pdf (182.41KB)
Distributor Distributor
Mouser Electronics
All other distributors
Stock 1568 In Stock
1 units: 5.94 USD
10 units: 4.99 USD
100 units: 4.04 USD
250 units: 3.81 USD
500 units: 3.59 USD
800 units: 3.07 USD
2400 units: 2.88 USD
BuyNow BuyNow Buy Now (Manufacturer a Vishay Intertechnologies VS-3C12ET07S2L-M3)

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