VS-3C12ET07S2L-M3 |
Part Number | VS-3C12ET07S2L-M3 |
Manufacturer | Vishay (https://www.vishay.com/) |
Description | / APPLICATIONS Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness. Optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications suffering from Silicon ultrafast recovery behavior. Typical applications include AC/DC PFC and DC/DC ultra hi. |
Features |
• Majority carrier diode using Schottky technology on SiC wide band gap material • Improved VF and efficiency by thin wafer technology • Positive VF temperature coefficient for easy paralleling • Virtually no recovery tail and no switching losses • Temperature invariant switching behavior • 175 °C maximum operating junction temperature • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • MPS structure for high ruggedness to forward current surge events • Meets JESD 201 class 1A whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 . |
Datasheet |
VS-3C12ET07S2L-M3 Data Sheet
PDF 182.41KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | VS-3C10ET07T-M3 |
Vishay |
650V Power SiC Gen 3 Merged PIN Schottky Diode | |
2 | VS-300CNQ045PbF |
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3 | VS-300MT160C |
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4 | VS-300MT180C |
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5 | VS-300U10A |
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6 | VS-300U20A |
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7 | VS-300U30A |
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8 | VS-300U40A |
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9 | VS-300U60A |
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10 | VS-300UR10A |
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