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| Part Number | VN2010L |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | VN2010L |
| Manufacturer | Supertex |
| Title | N-Channel Enhancement-Mode Vertical DMOS Power FETs |
| Description | "!!iupertexinc. VN2010L N-Channel Enhancement-Mode Vertical DMOS Power FETs Preliminary Ordering Information BVoss / BVOGS 200V ROS(ON) (max) 10n VGS(th) (max) 1.5V Order Number / Package T()"92 VN2010L Features o Freedom from secondary breakdown o Low power drive requirement o Ease of para. |
| Features | o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low Crss and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-pr. |
| Part Number | VN2010L |
| Manufacturer | Vishay Siliconix |
| Title | N-Channel 200-V (D-S) MOSFETs |
| Description | www.DataSheet4U.com VN2010L/BS107 Vishay Siliconix N-Channel 200-V (D-S) MOSFETs PRODUCT SUMMARY Part Number VN2010L BS107 200 V(BR)DSS Min (V) rDS(on) Max (W) 10 @ VGS = 4.5 V 28 @ VGS = 2.8 V VGS(th) (V) 0.8 to 1.8 0.8 to 3 ID (A) 0.19 0.12 D D D D D Low On-Resistance: 6 W Secondary Break. |
| Features | ATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Document Number: 70215 S-04279—Rev. C, 16-Jul-01 www.vishay.com TA= 25_C TA= 1. |
| Part Number | VN2010L |
| Manufacturer | TEMIC |
| Title | N-Channel Enhancement-Mode MOS Transistors |
| Description | Siliconix VN2010L/BS107 NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number VN2010L BS107 V(BR)DSS Min (V) 200 rDS(on) Max (W) 10 @ VGS = 4.5 V 28 @ VGS = 2.8 V VGS(th) (V) 0.8 to 1.8 0.8 to 3 ID (A) 0.19 0.12 Features Benefits D Low OnĆResistance: 6 W D Secondary Break. |
| Features | Benefits D Low OnĆResistance: 6 W D Secondary Breakdown Free: 220 V D Low Power/Voltage Driven D Low Input and Output Leakage D Excellent Thermal Stability D Low Offset Voltage D FullĆVoltage Operation D Easily Driven Without Buffer D Low Error Voltage D No HighĆTemperature RunĆAway" Applications D HighĆVoltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc. D Telephon. |
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