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| Part Number | VN0610LL |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | VN0610LL |
| Manufacturer | Vishay Siliconix |
| Title | N-Channel MOSFET |
| Description | VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel 60-V (D-S) MOSFETs PRODUCT SUMMARY Part Number VN10LLS VN0605T VN0610LL VN2222LL V(BR)DSS Min (V) 60 rDS(on) Max (W) 5 @ VGS = 10 V 5 @ VGS = 10 V 5 @ VGS = 10 V 5 @ VGS = 10 V VGS(th) (V) 0.8 to 2.5 0.8 to 3.0 0.8 to 2.5 0.6 to 2.. |
| Features | BENEFITS D Low On-Resistance: 2.5 W D Low Threshold: <2.1 V D Low Input Capacitance: 22 pF D Fast Switching Speed: 7 ns D Low Input and Output Leakage D Low Offset Voltage D Low-Voltage Operation D Easily Driven Without Buffering D High-Speed Circuits D Low Error Voltage APPLICATIONS D Direct Logic-Level Interface: TTL/CMOS D Solid State Relays D Drivers: Relays, Solenoids, Lamps, Hammers, Dis. |
| Part Number | VN0610LL |
| Manufacturer | Calogic LLC |
| Title | N-Channel Enhancement-Mode MOS Transistors |
| Description | www.DataSheet4U.com VN0610LL, VN10LM N-Channel Enhancement-Mode MOS Transistors VN0610LL / VN10LM FEATURES CORPORATION • Low rDS(on) <5Ω • Switching • Amplification PIN CONNECTIONS ORDERING INFORMATION Part Package Temperature Range -55oC to +150oC -55oC to +150oC VN0610LL Plastic TO-92 VN10LM P. |
| Features |
CORPORATION
• Low rDS(on) <5Ω • Switching • Amplification PIN CONNECTIONS ORDERING INFORMATION Part Package Temperature Range -55oC to +150oC -55oC to +150oC VN0610LL Plastic TO-92 VN10LM Plastic TO-237 For sorted chips in carriers see 2N7000 APPLICATIONS BOTTOM VIEW BOTTOM VIEW 3 TO-92 (TO-226AA) 2 1 1 2 3 1. SOURCE 2. GATE 3. DRAIN TO-237 1 2 3 1. SOURCE 2. GATE 3. TAB-DRAIN CD5 ABS. |
| Part Number | VN0610LL |
| Manufacturer | ON Semiconductor |
| Title | FET Transistor |
| Description | VN0610LL FET Transistor N−Channel — Enhancement MAXIMUM RATINGS Rating Drain −Source Voltage Drain −Gate Voltage (RGS = 1 MΩ) Gate −Source Voltage − Continuous − Non−repetitive (tp ≤ 50 μs) Drain Current Continuous Pulsed Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage . |
| Features | age (VGS = 0, ID = 100 μA) Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TJ = 125°C) Gate−Body Leakage Current, Forward (VGSF = 30 V, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) Static Drain−Source On−Resistance (VGS = 10 V, ID = 500 mA) (VGS = 10 V, ID = 500 mA, TC = 125°C) Drain−Source On−Voltage (VGS = 5.0 V, ID = 200 mA) (VG. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | VN0610L |
Siliconix |
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|
| 2 | VN0610L |
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| 3 | VN0610 |
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| 4 | VN06 |
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| 5 | VN0603L |
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| 6 | VN0603T |
Siliconix |
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|
| 7 | VN0605T |
Siliconix |
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|
| 8 | VN0605T |
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|
| 9 | VN0606 |
Supertex Inc |
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| 10 | VN0606L |
Vishay Telefunken |
N-Channel MOSFETs |
|
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