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| Part Number | TTC5200 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | TTC5200 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·Complement to Type TTA1943 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Power amplifier applications ·Recommended for 100W high fidelity audio frequency amplifier output stage AB. |
| Features | B= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8.0A; IB= 0.8A VBE(on) Base-Emitter On Voltage IC= 7A; VCE= 5V ICBO Collector Cutoff Current VCB= 230V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain IC= 7A; VCE= 5V COB Output Capacitance IE=0; VCB= 10V; f= 1.0MHz fT Current-Gain—Bandwidth Product IC=1A ; VCE. |
| Part Number | TTC5200 |
| Manufacturer | Nell |
| Title | Silicon NPN Transistor |
| Description | SEMICONDUCTOR TTC5200 Silicon NPN triple diffusion planar transistor 15A/230V/150W RoHS RoHS Nell High Power Products 20.00±0.20 18.00 ø3.30 ± 0.20 5.00 3.00 2.00 9.00 4.00 6.00 20.50 26.00 TO-3PL 3.00 2.50 (typ.) FEATURES High-speed switching High collector-emitter voltage: VCEO = 230V(mi. |
| Features | High-speed switching High collector-emitter voltage: VCEO = 230V(min) Complementary to TTA1943 TO-3PL package which can be installed to the heat sink with one screw 1.00 (typ.) 2.50 0.60 5.45 ± 0.05 3.20 5.45 ± 0.05 1 2 3 1. BASE 2. COLLECTOR (HEAT SINK) C APPLICATIONS Power amplifier Recommended for 100W high-fidelity audio frequency amplifier output stage 3. EMITTER B E PNP All dim. |
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| 1 | TTC5460B |
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| 2 | TTC |
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| 8 | TTC-025 |
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| 9 | TTC-045 |
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| 10 | TTC-050 |
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Desde 2024. D4U Semiconductor.
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