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TSM900N06CP N-Channel Power MOSFET

TSM900N06CP

TSM900N06CP
TSM900N06CP TSM900N06CP
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Part Number TSM900N06CP
Manufacturer Taiwan Semiconductor
Description TSM900N06CP Taiwan Semiconductor N-Channel Power MOSFET 60V, 11A, 90mΩ FEATURES ● 100% UIS and Rg tested ● Logic-level gate drive ● Fast switching ● RoHS Compliant ● Halogen-Free according to IEC 61249-2-21 APPLICATIONS ● DC-DC Converters ● Solenoid and Motor Drivers PRODUCT SUMMARY PARAMETER VALUE VDS 60 VGS = 10V 90 RDS(on) (max) VGS = 4.5V 100 .
Features
● 100% UIS and Rg tested
● Logic-level gate drive
● Fast switching
● RoHS Compliant
● Halogen-Free according to IEC 61249-2-21 APPLICATIONS
● DC-DC Converters
● Solenoid and Motor Drivers PRODUCT SUMMARY PARAMETER VALUE VDS 60 VGS = 10V 90 RDS(on) (max) VGS = 4.5V 100 Qg VGS = 10V 9.5 UNIT V mΩ nC TO-252 (DPAK) Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current (Note 1) TC = 25°C 11 ID TC = 100°C .
Datasheet Datasheet TSM900N06CP Data Sheet
PDF 579.38KB
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