TSCDT08065G1 650V SiC Merged PIN Schottky Diode Datasheet


Taiwan Semiconductor
Part Number TSCDT08065G1
Manufacturer Taiwan Semiconductor
Title SiC Schottky Diodes 8A, 650V, SiC Schottky Diode
Description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC pr...
● Max junction temperature 175°C
● MPS structure for high ruggedness to forward current surge events
● High-speed switching possible
● High forward surge capability
● High-frequency operation
● Positive temperature coefficient on VF
● RoHS compliant
● Halogen-free KEY PARAMETERS PARAMETER VALUE UNIT IF 8 A VRRM 650 V IFSM 72 A TJ MAX 175 °C Package TO-220AC-2L Configuration Single die APPLICATIONS
● General purpose
● Switch mode power supplies
● Power factor correction MECHANICAL DATA
● Case: TO-220AC-2L
● Molding compound meets UL 94V-0 flammability rating
● Terminal: Matt...

Document Datasheet TSCDT08065G1 datasheet pdf (376.28KB)
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Stock 1000 In Stock
1 units: 3.77 USD
10 units: 3.17 USD
100 units: 2.56 USD
250 units: 2.42 USD
500 units: 2.28 USD
1000 units: 1.95 USD
2500 units: 1.84 USD
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