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TPC8020-H |
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| Part Number | TPC8020-H |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | www.DataSheet4U.com TPC8020-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High-Speed U-MOSIII) TPC8020-H High-Speed and High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • • • • • • • Small footprint due to small and thin package High-speed switching Small gate charge: Qg = 23 nC (ty. |
| Features | lanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range Weight: 0.080 g (typ.) 1.9 W PD EA S IAR EAR Tch Tstg 1.0 W Circuit Configuration 110 13 0.084 150 −55 to 150 mJ 8 7 6 5 A mJ °C °C 1 2 3 4 Note 1, Note 2, Note 3 and Note 4: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2004-07-06 TPC8020-H Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (t = 10 s) (Note 2a) Symbol Rth (ch-a) Max 65.8 Unit °C/W Thermal resistance, channel to a. |
| Datasheet |
 TPC8020-H Data Sheet
PDF 111.00KB |
| Distributor | Stock | Price | Buy |
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TPC8020-H |
| Part Number | TPC8020-H |
| Manufacturer | VBsemi |
| Title | N-Channel MOSFET |
| Description | TPC8020-H(TE12LQM) N-Channel 20V (D-S) MOSFET www.VBsemi.tw PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.012 at VGS = 10 V 0.015 at VGS = 4.5 V ID (A)a 12 11 Qg (Typ.) 6.1 nC FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 % Rg . |
| Features |
• Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 % Rg Tested • 100 % UIS Tested S1 S2 S3 G4 SO-8 8D 7D 6D 5D APPLICATIONS • Notebook CPU Core - High-Side Switch D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 20 . |
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Desde 2024. D4U Semiconductor.
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