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| Distributor | Stock | Price | Buy |
|---|
TK40A10N1 |
| Part Number | TK40A10N1 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK40A10N1，ITK40A10N1 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 8.2mΩ (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and re. |
| Features |
·Low drain-source on-resistance: RDS(ON) = 8.2mΩ (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TK40A10J1 |
Toshiba Semiconductor |
MOSFET |
|
| 2 | TK40A10K3 |
Toshiba Semiconductor |
Field Effect Transistor |
|
| 3 | TK40A06N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 4 | TK40A06N1 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | TK40A08K3 |
Toshiba Semiconductor |
MOSFET |
|
| 6 | TK40D10J1 |
Toshiba Semiconductor |
MOSFET |
|
| 7 | TK40E06N1 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | TK40E06N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 9 | TK40E10N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 10 | TK40E10N1 |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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