Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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TIP122 |
| Part Number | TIP122 |
| Manufacturer | Motorola |
| Title | DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP120/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining V. |
| Features | ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ. |
TIP122 |
| Part Number | TIP122 |
| Manufacturer | RECTRON |
| Title | Power Transistors |
| Description | RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2. Collector 3. Emitter 4. Collector Dimensions in millimeters Electrical Characteristics (Ta=25oC) Part # Polarity VCBO VCEO VEBO (V) (V) (V) Min Mi. |
| Features | . |
TIP122 |
| Part Number | TIP122 |
| Manufacturer | Bourns |
| Title | NPN SILICON POWER DARLINGTONS |
| Description | TIP120, TIP121, TIP122 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP125, TIP126 and TIP127 ● 65 W at 25°C Case Temperature ● 5 A Continuous Collector Current ● Minimum hFE of 1000 at 3 V, 3 A This series is obsolete and not recommended for new designs. TO-220 PACKAGE (TOP. |
| Features | . |
TIP122 |
| Part Number | TIP122 |
| Manufacturer | ON Semiconductor |
| Title | Plastic Medium-Power Complementary Silicon Transistors |
| Description | Plastic Medium-Power Complementary Silicon Transistors TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ . |
| Features |
• High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − TIP120, TIP125 = 80 Vdc (Min) − TIP121, TIP126 = 100 Vdc (Min) − TIP122, TIP127 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 4.0 Vdc (Max) @ IC = 5.0 Adc • Monolithic Construction with Built−In Base−Emitter Shunt Resistors. |
TIP122 |
| Part Number | TIP122 |
| Manufacturer | MCC |
| Title | NPN Silicon Transistors |
| Description | MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# TIP122 Features • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) • Darlington configurat. |
| Features |
• Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) • Darlington configuration in Jedec TO-220 package • The complementary PNP types are the TIP127 respectively. • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 NPN Silicon Transistors Maximum Ratings Symbol VCEO VCBO VEBO ICP IC PC TJ TSTG Rating Collector-Emitter . |
TIP122 |
| Part Number | TIP122 |
| Manufacturer | Fairchild |
| Title | NPN Epitaxial Darlington Transistor |
| Description | TIP120 / TIP121 / TIP122 — NPN Epitaxial Darlington Transistor November 2014 TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor Features • Medium Power Linear Switching Applications • Complementary to TIP125 / TIP126 / TIP127 Equivalent Circuit C B 1 TO-220 1.Base 2.Collector 3.Emitter. |
| Features |
• Medium Power Linear Switching Applications • Complementary to TIP125 / TIP126 / TIP127 Equivalent Circuit C B 1 TO-220 1.Base 2.Collector 3.Emitter R1 ≅Ω ≅Ω R2 E Ordering Information Part Number TIP120 TIP120TU TIP121 TIP121TU TIP122 TIP122TU Top Mark TIP120 TIP120 TIP121 TIP121 TIP122 TIP122 Package TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Si. |
TIP122 |
| Part Number | TIP122 |
| Manufacturer | Diotec Semiconductor |
| Title | (TIP120 - TIP122) Si-Epitaxial Planar Darlington Power Transistors |
| Description | TIP120 ... TIP122 TIP120 ... TIP122 NPN Version 2006-10-17 10±0.2 3 4 3.8 Type Typ Si-Epitaxial Planar Darlington Power Transistors Si-Epitaxial Planar Darlington-Leistungs-Transistoren Max. power dissipation with cooling Max. Verlustleistung mit Kühlung Collector current Kollektorstrom Plastic ca. |
| Features |
n temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 25°C TC = 25°C Ptot Ptot IC ICM IB Tj TS B open E open C open VCEO VCBO VEBO 60 V 60 V 3.4 Grenzwerte (TA = 25°C) TIP120 TIP121 80 V 80 V 5V 2 W 1) 65 W 5A 8A 120 mA -55...+150°C -55…+150°C TIP122 100 V 100 V Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis ) 2 Kennwerte (Tj . |
TIP122 |
| Part Number | TIP122 |
| Manufacturer | SEMIHOW |
| Title | PNP Epitaxial Silicon Darlington Transistor |
| Description | TIP120/121/122 TIP120/121/122 ◎ SEMIHOW REV.A0,Oct 2007 TIP120/121/122 TIP120/121/122 Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= 4V, IC= 3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - . |
| Features | . |
TIP122 |
| Part Number | TIP122 |
| Manufacturer | KEC |
| Title | EPITAXIAL PLANAR NPN TRANSISTOR |
| Description | SEMICONDUCTOR TECHNICAL DATA TIP122 EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES ᴌHigh DC Current Gain : hFE=1000(Min.) at VCE=3V, IC=3A. ᴌHigh Collector Breakdown Voltage : VCEO=100V(Min.) MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC. |
| Features | ᴌHigh DC Current Gain : hFE=1000(Min.) at VCE=3V, IC=3A. ᴌHigh Collector Breakdown Voltage : VCEO=100V(Min.) MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pules Base Current Collector Power Dissipation (Tc=25ᴱ) Junction Temperature VCBO VCEO VEB0 IC ICP IB PC Tj Storage Temperature Range Tstg R. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TIP120 |
TAITRON |
Darlington NPN Power Transistors |
|
| 2 | TIP120 |
WEITRON |
NPN Transistor |
|
| 3 | TIP120 |
MCC |
NPN Epitaxial Darlington Transistors |
|
| 4 | TIP120 |
CDIL |
NPN PLASTIC POWER TRANSISTORS |
|
| 5 | TIP120 |
SavantIC |
Silicon NPN Darlington Power Transistors |
|
| 6 | TIP120 |
Bourns |
NPN SILICON POWER DARLINGTONS |
|
| 7 | TIP120 |
INCHANGE |
NPN Transistor |
|
| 8 | TIP120 |
Fairchild |
NPN Epitaxial Darlington Transistor |
|
| 9 | TIP120 |
Motorola |
DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 10 | TIP120 |
NTE |
Silicon NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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