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TGM2635-CP |
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| Part Number | TGM2635-CP |
| Manufacturer | TriQuint Semiconductor |
| Description | TGM2635-CP X-band 100 W GaN Power Amplifier 1 of 14 www.qorvo.com TGM2635-CP ® X-Band 100 W GaN Power Amplifier Absolute Maximum Ratings Parameter Rating Drain Voltage (VD) 40 V Gate Voltage Range (VG) −8 to −0 V Drain Current (ID) 16 A Gate Current (IG) Power Dissipation (PDISS), 85°C, Pulsed; PW = 100 us, DC = 10% Input Power (PIN), 50 Ω, 8. |
| Features |
• Frequency Range: 7.9 – 11 GHz • PSAT: 50 dBm (PIN = 28 dBm) • PAE: 35% (PIN = 28 dBm) • Large Signal Gain: 22 dB (PIN = 28 dBm) • Small Signal Gain: 26 dB • Bias: VD = 28 V, IDQ = 1.3 A • Package Dimensions: 19.05 x 19.05 x 4.52 mm • Performance Under Pulsed Operation Functional Block Diagram Applications • X-band Radar • Satellite Communications • Data Links Top View Data Sheet Rev. H, May 2023 Ordering Information Part Description TGM2635-CP X-band 100 W GaN Power Amplifier 1 of 14 www.qorvo.com TGM2635-CP ® X-Band 100 W GaN Power Amplifier Absolute Maximum Ratings Parameter . |
| Datasheet |
 TGM2635-CP Data Sheet
PDF 924.96KB |
| Distributor | Stock | Price | Buy |
|---|
TGM2635-CP |
| Part Number | TGM2635-CP |
| Manufacturer | Qorvo |
| Title | X-Band 100W GaN Power Amplifier |
| Description | TGM2635-CP X-band 100 W GaN Power Amplifier 1 of 14 www.qorvo.com TGM2635-CP ® X-Band 100 W GaN Power Amplifier Absolute Maximum Ratings Parameter Rating Drain Voltage (VD) 40 V Gate Voltage Range (VG) −8 to −0 V Drain Current (ID) 16 A Gate Current (IG) Power Dissipation (PDISS), 85. |
| Features |
• Frequency Range: 7.9 – 11 GHz • PSAT: 50 dBm (PIN = 28 dBm) • PAE: 35% (PIN = 28 dBm) • Large Signal Gain: 22 dB (PIN = 28 dBm) • Small Signal Gain: 26 dB • Bias: VD = 28 V, IDQ = 1.3 A • Package Dimensions: 19.05 x 19.05 x 4.52 mm • Performance Under Pulsed Operation Functional Block Diagram Applications • X-band Radar • Satellite Communications • Data Links Top View Data Sheet Rev. I, Augus. |
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